PART |
Description |
Maker |
RA30H4452M RA30H4452M-01 RA30H4452M-E01 |
440-520MHz 30W 12.5V MOBILE RADIO 440 - 520MHz的功0W 12.5V移动通信
|
Mitsubishi Electric Semicon... Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
|
HEDT-9140 HEDT-9141 HEDT-9140I00 |
High Temperature 140 degrees C Three Channel Optical Incremental Encoder Modules 高温140摄氏度三通道光学增量编码器模 HEDT-9141#I00 · High Temperature 140 degrees C Three Channel Optical Incremental Encoder Modules HEDT-9140#I00 · High Temperature 140 degrees C Three Channel Optical Incremental Encoder Modules
|
Ecliptek, Corp. Agilent (Hewlett-Packard)
|
KAD5512HP KAD5512HP-12Q48 KAD5512HP-12Q72 KAD5512H |
High Performance 12-Bit, 250/210/170/125MSPS ADC
|
ETC
|
KAD5512HP KAD5512HP-12Q48 KAD5512HP-12Q72 KAD5512H |
High Performance 12-Bit, 250/210/170/125MSPS ADC
|
Intersil Corporation
|
FDPF15N65YDTU FDPF15N65 |
N-Channel UniFETTM MOSFET 650V, 15A, 440 m N-Channel UniFETTM MOSFET 650 V, 15 A, 440 m?
|
Fairchild Semiconductor
|
2729-170 |
170 Watts, 38 Volts, 100us, 10% 170 Watts, 38 Volts, 100?, 10% 170 Watts, 38 Volts, 100us, 10% 170 Watts, 38 Volts, 100刁, 10%
|
ADPOW[Advanced Power Technology]
|
PTFA071701E PTFA071701F |
Thermally-Enhanced High Power RF LDMOS FETs 170 W, 725 鈥?770 MHz
|
Infineon Technologies AG
|
BTS5231-2GS |
Smart High-Side Power Switch PROFET Two Channels, 140 m 惟 Smart High-Side Power Switch PROFET Two Channels, 140 m Ω
|
Infineon Technologies AG
|
MP03GN440-18 MP03GN440-21 |
440 A, 1800 V, SILICON, RECTIFIER DIODE 440 A, 2100 V, SILICON, RECTIFIER DIODE
|
DYNEX SEMICONDUCTOR LTD
|
PTVA042502FCV1R0 PTVA042502EC |
Thermally-Enhanced High Power RF LDMOS FET 250 W, 50 V, 470 ?806 MHz Thermally-Enhanced High Power RF LDMOS FET 250 W, 50 V, 470 ?806 MHz
|
Infineon Technologies A...
|
SF0140BA01990S |
140 MHz Filter 24 MHz Bandwidth 140 MHz Low Loss SAW Filters
|
API Technologies Corp Integrated Circuit Systems ICS
|