| PART |
Description |
Maker |
| AD9888/PCB AD9888KS-170 |
100/140/170/205 MSPS Analog Flat Panel Interface
TRI N RECP M FLG 2-13
|
Analog Devices, Inc.
|
| AD9888KSZ-100 AD9888KSZ-140 |
100 MSPS/140 MSPS/170 MSPS Analog Flat Panel Interface
|
Analog Devices
|
| BSS123LT3G BSS123LT1 BSS123LT1D BSS123LT1G BSS123L |
Power MOSFET 170 mAmps, 100 Volts N-Channel SO-23(170 mA, 100 V，N通道SOT3封装的功率MOSFET)
TMOS FET Transistor
|
ONSEMI[ON Semiconductor]
|
| OIS-170660 OIS-170660-X-T OIS-170670-X-T OIS-17069 |
Series 170 - 0805 Standard IR high intensity 660-850 nm
|
OSA Opto Light GmbH
|
| M68703HA 68703HA M68703 |
RF POWER MODULE 440-470MHz, 12.5V, 50W, FM MOBILE RADIO
440-470mhZ / 12.5v / 50w / fm mobile radio
From old datasheet system
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| AD5310 AD5310BRM AD5310BRT AD5310BRM-REEL AD5310BR |
2.5 V to 5.5 V/ 230uA/ Parallel Interface Dual Voltage-Output 8-/10-/12-Bit DACs
2.7 V to 5.5 V, 140 A, Rail-to-Rail Voltage Output 10-Bit DAC
2.7 V to 5.5 V, 140 uA, Rail-to-Rail Voltage Output 10-Bit DAC in a SOT-23
2.7 V to 5.5 V/ 140 uA/ Rail-to-Rail Voltage Output 10-Bit DAC in a SOT-23
Lithium Battery; Voltage Rating:3.6V; Battery Terminals:Connector SERIAL INPUT LOADING, 6 us SETTLING TIME, 10-BIT DAC, PDSO8
2.7 V to 5.5 V. 140 uA. Rail-to-Rail Voltage Output 10-Bit DAC in a SOT-23 2.7伏至5.540微安。轨至轨电压输出10位DAC采用SOT - 23
2.7 V to 5.5 V, 140 µA, Rail-to-Rail Voltage Output 10-Bit DAC
2.5 V to 5.5 V/ 115 uA/ Parallel Interface Single Voltage-Output 8-/10-/12-Bit DACs
|
ANALOG DEVICES INC
AD[Analog Devices]
Analog Devices, Inc.
|
| APT15S20K APT15S20KG |
HIGH VOLTAGE SCHOTTKY DIODE
Schottky Discrete RECTIFIER; Package: TO-220 [K]; VR (V): 200; IO (A): 25; VF (V): 0.8; trr (nsec): 20; Qrr (nC): 440;
|
Microsemi Corporation
MICROSEMI POWER PRODUCTS GROUP
|
| M68769SH |
RF POWER MODULE 470-512 MHz, 12.5V, 45W FM MOBILE RADIO
470-512MHz, 12.5V, 45W, FM MOBILE RADIO
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PTVA042502FCV1R0 PTVA042502EC |
Thermally-Enhanced High Power RF LDMOS FET 250 W, 50 V, 470 ?806 MHz
Thermally-Enhanced High Power RF LDMOS FET 250 W, 50 V, 470 ?806 MHz
|
Infineon Technologies A...
|
| PTFC261402FC |
Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 2620 ?2690 MHz
|
Cree, Inc
|
| FSS230R FSS230D FN4054 FSS230R4 FSS230D1 FSS230D3 |
RC NETWORK 220 OHM/100PF 5% SMD 8 A, 200 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system
8A,200V,0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
8A/ 200V/ 0.440 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
