PART |
Description |
Maker |
AM29LV160BT-90WCC AM29LV160BT-90EE AM29LV160BT-90S |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 16 FLASH 3V PROM, 90 ns, PBGA48 1M X 16 FLASH 3V PROM, 90 ns, PDSO48 1M X 16 FLASH 3V PROM, 90 ns, PDSO44 1M X 16 FLASH 3V PROM, 70 ns, PDSO48 1M X 16 FLASH 3V PROM, 120 ns, PDSO48
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Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
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S29GL128M10TAIR10 S29GL128M10TAFR93 S29GL128M10TAF |
8M X 16 FLASH 3V PROM, 100 ns, PDSO56 MO-142EC, TSOP-56 8M X 16 FLASH 3V PROM, 100 ns, PDSO56 TSOP-56 8M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56 8M X 16 FLASH 3V PROM, 100 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56 16M X 16 FLASH 3V PROM, 110 ns, PBGA64 18 X 12 MM, FORTIFIED, BGA-64 256 Megabit, 3.0 Volt-only Page Mode Flash Memory 16M X 16 FLASH 3V PROM, 110 ns, PBGA64 4M X 16 FLASH 3V PROM, 90 ns, PDSO56 4M X 16 FLASH 3V PROM, 100 ns, PDSO48 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 2M X 16 FLASH 3V PROM, 110 ns, PBGA64
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Spansion, Inc. SPANSION LLC
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JS48F4400P0VB00 PF48F2000P0ZBQ0A JS28F128P30B85B P |
32M X 16 FLASH 1.8V PROM, 95 ns, PDSO56 14 X 20 MM, LEAD FREE, TSOP-56 4M X 16 FLASH 1.8V PROM, 88 ns, PBGA88 8 X 10 MM, 1.20 MM HEIGHT, LEAD FREE, SCSP-88 8M X 16 FLASH 1.8V PROM, 88 ns, PDSO56 16M X 16 FLASH 1.8V PROM, 88 ns, PBGA64
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Numonyx Asia Pacific Pte, Ltd.
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PA28F008SC-90 E28F008SC-150 PA28F008SC-170 |
1M X 8 FLASH 3.3V PROM, 90 ns, PDSO44 13.30 X 28.20 MM, PLASTIC, SOP-44 1M X 8 FLASH 3.3V PROM, 150 ns, PDSO40 1M X 8 FLASH 3.3V PROM, 170 ns, PDSO44
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Intel, Corp. INTEL CORP
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CY7C291A-25JC CY7C291A-25PC CY7C291A-35JC CY7C291A |
2K x 8 Reprogrammable PROM 2K X 8 OTPROM, 35 ns, PDIP24 2K x 8 Reprogrammable PROM 2K X 8 OTPROM, 50 ns, PDIP24 2K x 8 Reprogrammable PROM 2K X 8 UVPROM, 50 ns, CDIP24 MICROMINIATURE POLARIZED LATCHING RELAY
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Cypress Semiconductor, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
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PY291A PY291A-25DMB PY291A-25WMB PY291A-25WC PY291 |
2K X 8 REPROGRAMMABLE PROM 2K X 8 OTPROM, 25 ns, PDIP24 2K X 8 REPROGRAMMABLE PROM 2K × 8可重复编程胎膜早 2K X 8 REPROGRAMMABLE PROM 2K X 8 OTPROM, 35 ns, PDIP24 2K X 8 REPROGRAMMABLE PROM 2K X 8 UVPROM, 35 ns, CDIP24
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Pyramid Semiconductor Corporation Pyramid Semiconductor, Corp.
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K8P3215UQB-PE4B0 K8P3215UQB-DI4A0 |
2M X 16 FLASH 2.7V PROM, 60 ns, PDSO48 20 X 12 MM, PLASTIC, TSOP1-48 2M X 16 FLASH 2.7V PROM, 55 ns, PBGA48 6 X 8 MM, 0.80 MM PITCH, LEAD FREE, FBGA-48
|
Analog Devices, Inc. STMicroelectronics N.V.
|
MBM29DL321BD-80 MBM29DL322BD-80 MBM29DL323BD-80 MB |
OFFICE 802.3 TRANS CBL 1M 4M X 8 FLASH 3V PROM, 80 ns, PBGA57 TVS BIDIRECT 600W 33V SMB 32M的(4米8/2M × 16)位双操 32M (4M X 8/2M X 16) BIT Dual Operation 4M X 8 FLASH 3V PROM, 80 ns, PBGA57 32M (4M X 8/2M X 16) BIT Dual Operation 4M X 8 FLASH 3V PROM, 80 ns, PDSO48
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FUJITSU LTD Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
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S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56 2M X 16 FLASH 3V PROM, 100 ns, PBGA56 4M X 16 FLASH 3V PROM, 90 ns, PBGA64 Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 4M X 16 FLASH 3V PROM, 100 ns, PDSO48
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Spansion, Inc. SPANSION LLC
|
MX23C1010 MX23C1010MC-10 MX23C1010MC-12 MX23C1010M |
1M-BITMASKROM(8BITOUTPUT) From old datasheet system 1M-BIT MASK ROM(8 BIT OUTPUT) MINIATURE GENERAL PURPOSE RELAY 128K X 8 MASK PROM, 45 ns, PDIP32 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 90 ns, PDIP32 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 100 ns, PQCC32 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 150 ns, PQCC32 1M-BIT MASK ROM (8 BIT OUTPUT) 100万位掩码光盘位输出) 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 120 ns, PDIP32 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 70 ns, PDSO32 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 120 ns, PQCC32 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 100 ns, PDSO32
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MCNIX[Macronix International] Macronix 旺宏 Macronix International Co., Ltd. Altera, Corp.
|
NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位千兆位(x8/x1628 Byte/264字的页面.8V/3V,NAND闪存芯片 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位1千兆位(x8/x1628 Byte/264字的页面1.8V/3V,NAND闪存芯片 128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 64M X 8 FLASH 3V PROM, 35 ns, PBGA55 64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 128M X 8 FLASH 3V PROM, 35 ns, PDSO48 8M X 16 FLASH 3V PROM, 35 ns, PDSO48 32M X 16 FLASH 3V PROM, 35 ns, PDSO48 32M X 16 FLASH 3V PROM, 35 ns, PBGA55
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ST Microelectronics 意法半导 STMicroelectronics N.V. NUMONYX http://
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M39432-12VNC6T M39432-15VNC6T M39432-20VNC6T M3943 |
512K X 8 FLASH 3V PROM, 120 ns, PDSO40 512K X 8 FLASH 3V PROM, 150 ns, PDSO40 512K X 8 FLASH 3V PROM, 200 ns, PDSO40 512K X 8 FLASH 3V PROM, 250 ns, PDSO40
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STMICROELECTRONICS NUMONYX
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