| PART |
Description |
Maker |
| M74HC195RM13TR |
8 BIT PIPO SHIFT REGISTER
|
SGS Thomson Microelectronics
|
| 74LVQ299M 74LVQ299MTR 74LVQ299TTR |
8 BIT PIPO SHIFT REGISTER WITH ASYNCHRONOUS CLEAR
|
ST Microelectronics
|
| K4S640832E-TC1H K4S640832E-TC1L K4S640832E-TC75 K4 |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
2M x 8Bit x 4 Banks Synchronous DRAM Data Sheet
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| TC74HC299AF TC74HC299AP E004823 |
8-BIT PIPO SHIFT REGISTER WITH ASYNCHRONOUS CLEAR
From old datasheet system
|
Toshiba
|
| M74HC323 M74HC323B1R M74HC323C1R M74HC323F1R M74HC |
HC323 8 BIT PIPOSHIFT REGISTER WITH SYNCHRONOUS CLEAR HC299 8 BIT PIPO SHIFT REGISTER WITH ASYNCHRONOUS CLEAR
CLEAR HC299 /HC323 8BITPIPOSHIFTREGISTERWITHSYNCHRONOUS
HC323 8BITPIPOSHIFTREGISTERWITHSYNCHRONOUS CLEAR HC299 8BITPIPOSHIFTREGISTERWITHASYNCHRONOUS CLEAR
HC299 8 BIT PIPO SHIFT REGISTER WITH ASYNCHRONOUS CLEAR HC323 8 BIT PIPOSHIFT REGISTER WITHSYNCHRONOUS CLEAR
12-Bit, 2.5 us Dual DAC, Serial Input, Pgrmable Settling Time, Q temp available 8-SOIC -40 to 125
|
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4 |
8M X 8 EDO DRAM, 45 ns, PDSO32
8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输
(K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM48V8104B KM48V8004B KM48V8004BKL-5 KM48V8004BKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HY57V64820HGLTP-5 HY57V64820HGLTP-55 HY57V64820HGL |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
|
Hynix Semiconductor, Inc.
http://
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| TB62705CF TB62705CFN TB62705CP EE08019 TB62705 |
8BIT SHIFT REGISTER / LATCHES & CONSTANT CURRENT DRIVERS
8BIT SHIFT REGISTER, LATCHES & CONSTANT CURRENT DRIVERS
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| BH2228FV |
8bit 6ch D/A converter
|
ROHM[Rohm]
|
