PART |
Description |
Maker |
PJS6600 |
30V Complementary Enhancement Mode MOSFET ?ESD Protected
|
Pan Jit International I...
|
CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772 Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
ACE4606TBFMH |
30V Complementary Enhancement Mode Field Effect Transistor
|
ACE Technology Co., LTD...
|
AON7611 |
30V Complementary MOSFET
|
Alpha & Omega Semicondu...
|
AO4629 |
30V Complementary MOSFET
|
Alpha & Omega Semicondu...
|
SSF4604-15 |
30V Complementary MOSFET
|
GOOD-ARK Electronics
|
SSF4606-15 |
30V Complementary MOSFET
|
GOOD-ARK Electronics
|
AO6601 AO660112 |
30V Complementary MOSFET
|
Alpha & Omega Semiconductors
|
SI4542DY SI4542D SI4542 |
30V Complementary PowerTrench MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
ZXTC2045E6-15 |
30V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26
|
Diodes Incorporated
|
STT6602 |
N-Ch: 3.3A, 30V, RDS(ON) 65 m P-Ch: -2.3A, -30V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|