PART |
Description |
Maker |
CY101E484-4DC CY101E484-4KC CY101E484-4YC CY101E48 |
x4SRAM
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HY6264 HY6264-10 HY6264-12 HY6264-15 HY6264-70 HY6 |
8KX8-Bit CMOS SRAM x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDSO28 x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDIP28 x8 SRAM 8K X 8 STANDARD SRAM, 85 ns, PDSO28
|
HYNIX[Hynix Semiconductor] Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
R1RW0408DGE-2PR R1RW0408D R1RW0408DGE-2LR |
4M High Speed SRAM (512-kword x 8-bit) Memory>Fast SRAM>Asynchronous SRAM
|
Renesas Electronics Corporation. RENESAS[Renesas Electronics Corporation]
|
HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 H |
Memory>Fast SRAM>QDR SRAM 36-Mbit DDR II SRAM Separate I/O 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
AS5C4009LLDG-100/XT AS5C4009LLDG-100/IT AS5C4009LL |
512K*8 SRAM ultra Low power SRAM AVAILABLE AS MILITARY SPECIFICATION x8 SRAM x8的SRAM
|
Austin Semiconductor, Inc
|
R1RW0404DGE-2PR R1RW0404D R1RW0404DGE-2LR REJ03C01 |
Memory>Fast SRAM>Asynchronous SRAM 4M HIGH SPEED SRAM (1-MWORD X 4-BIT)
|
RENESAS[Renesas Electronics Corporation]
|
HM62W8511HCLJP-12 HM62W8511HC HM62W8511HCJP-10 HM6 |
Memory>Fast SRAM>Asynchronous SRAM 4M High Speed SRAM (512-kword x 8-bit) BOX 5.0X1.85X1.0 W/CLP BLK
|
RENESAS[Renesas Electronics Corporation] Renesas Electronics Corporation.
|
GS820E32T-66 GS820E32T-100 GS820E32Q-150 GS820E32Q |
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM 150MHz 9ns 64K x 32 2M synchronous burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100 64K X 32 CACHE SRAM, 12 ns, PQFP100 64K X 32 CACHE SRAM, 10 ns, PQFP100 5.6UF/100VDC METAL POLY CAP 200万同步突发静态存储器 2M Synchronous Burst SRAM 200万同步突发静态存储器 Socket Adapter; For Use With:ATMEGA168-TQFP32, ATMEGA48-TQFP32, ATMEGA88-TQFP32, ATMEGA8L-TQFP32, ATMEGA8L(FAST)-TQFP32; Pitch Spacing:.8mm 64K x 32 / 2M Synchronous Burst SRAM 117MHz 11ns 64K x 32 2M synchronous burst SRAM 66MHz 18ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers
|
AS7C251MNTD18A AS7C251MNTD18A-166TQIN AS7C251MNTD1 |
2.5V 1M x 18 Pipelined SRAM with NTD 1M X 18 ZBT SRAM, 3.8 ns, PQFP100 Current Mode PWMs; Package: DIP; NTD? Sync SRAM - 2.5V
|
Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|
AS7C33128NTD18B AS7C33128NTD18B-200TQIN AS7C33128N |
3.3V 128Kx18 Pipelined SRAM with NTD 128K X 18 ZBT SRAM, 3 ns, PQFP100 NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|
AS7C252MNTD18A AS7C252MNTD18A_V1.2 AS7C252MNTD18A- |
2.5V 2M x 18 Pipelined SRAM with NTD 2M X 18 ZBT SRAM, 3.2 ns, PQFP100 From old datasheet system NTD? Sync SRAM - 2.5V
|
Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|