| PART |
Description |
Maker |
| UPD421175G5-35-7JF UPD421175G5-25-7JF UPD421175LE- |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
NEC, Corp.
|
| V53C16258HK60 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Murata Manufacturing Co., Ltd.
|
| HY5116164BSLTC-60 HY5116164BJC-60 HY5116164BSLJC-8 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Omron Electronics, LLC
Infineon Technologies AG
|
| UPD424210G5-60-7JF UPD424210G5-60-7JF-G UPD424210L |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
FIBOX
|
| MSM51V4265 MSM51V4265E MSM51V4265E-70TS-K |
256K X 16 EDO DRAM, 70 ns, PDSO40
DRAM / FAST PAGE MODE TYPE
262,144-Word 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
|
LAPIS SEMICONDUCTOR CO LTD
OKI electronic componets
|
| HY51V17805 HY51V17805BRC-60 HY51V17805BTC-60 HY51V |
2M*8-bit CMOS DRAM with Burst EDO
x8 Burst EDO Page Mode DRAM
|
广州运达电子科技有限公司
|
| GM71C18163BT-8 GM71C18163BJ-6 GM71C18163BJ-8 GM71C |
1,048,576 words x 16 bit DRAM, 80ns, low power
1,048,576 words x 16 bit DRAM, 70ns, low power
1,048,576 words x 16 bit DRAM, 60ns, low power
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
LG Semiconductor
|
| GM71V17400CT-6 GM71V17400CCL |
x4 Fast Page Mode DRAM
4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M
|
|
| HYB514405BJL-70 HYB514405BJL-60 HYB514405BJL-50 HY |
1M x 4 Bit EDO DRAM 5 V 70 ns
1M x 4-Bit Dynamic RAM (Hyper Page Mode (EDO) version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HY51V65404ASLTC50 |
x4 EDO Page Mode DRAM
|
|
