| PART |
Description |
Maker |
| AT24C01B-TSU-T AT24C01BN-SH-T AT24C01B-TH-B AT24C0 |
DIE SALE, 1.8V, 11 MIL(SERIAL EE) 128 X 8 I2C/2-WIRE SERIAL EEPROM, UUC
|
聚兴科技股份有限公司
Atmel, Corp.
|
| 408-8737 |
The die assembly consists of an indenter die and nest die. Each die is held in the tool by a single screw
|
Tyco Electronics
|
| 5017-013 |
Closeout sale in progress
|
List of Unclassifed Man...
|
| 5017-009 |
Closeout sale in progress
|
List of Unclassifed Man...
|
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HMT351U7CFR8C-H9 HMT351U7CFR8C-RD HMT351U7CFR8C-PB |
DDR3 SDRAM Unbuffered DIMMs Based on 2Gb C-Die
DDR3L SDRAM Unbuffered DIMMs Based on 4Gb M-Die
|
Hynix Semiconductor
|
| SIDC00D60SIC2SAWN SIDC00D60SIC2UNSAWN |
Diodes - HV Chips - 600V, 2A die sawn
Diodes - HV Chips - 600V, 2A die unsawn
|
Infineon
|
| 3606 3601 |
Die Cast Aluminum Box Painted, Size “D
Die Cast Aluminum Box Painted, Size 隆掳D隆卤
|
Pomona Electronics
|
| 11-40-2015 1140-2015 0011-40-2015 001140-2015 |
Terminator Die
|
Molex Electronics Ltd.
|
| 11-40-2004 T8302A 1140-2004 0011-40-2004 001140-20 |
Terminator Die
|
Molex Electronics Ltd.
|
| 11-40-2099 T8301DX 1140-2099 0011-40-2099 00114020 |
Terminator Die
|
Molex Electronics Ltd.
|
