PART |
Description |
Maker |
BS170 |
Small Signal MOSFET 500 mAmps, 60 Volts N-Channel TO-92(500mA,60V,小信号,N-沟道增强型MOS场效应管(TO-92封装
|
ON Semiconductor
|
VN2406L VN2406LZL1 |
Small Signal MOSFET 200 mAmps, 240 Volts
|
ON Semiconductor
|
BUZ40B BSP372 BSP373 BSS129 BSS101 SN7000 BSS135 |
8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 TO-220, 3 PIN SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level Avalanche rated 1.7 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated) 150 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 130 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 250 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 80 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
Infineon Technologies AG SIEMENS AG SIEMENS A G
|
MGSF1N02LT1 MGSF1N02LT3 MGSF1N02L MGSF1N02LT1-D |
Power MOSFET 750 mAmps, 20 Volts 750 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB Power MOSFET 750 mAmps, 20 Volts N-Channel SOT-23
|
ONSEMI[ON Semiconductor]
|
BS108ZL1 BS108 BS108ZL1G BS108G |
Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N-Channel TO-92(250mA,200V,小信号,逻辑电平,N-沟道增强型MOS场效应管(TO-92封装
|
ONSEMI[ON Semiconductor]
|
L2N7002DW1T1G L2N7002DW1T3G |
Small Signal MOSFEO 115 mAmps, 60 Volts
|
Leshan Radio Company
|
MMBZ5230BL MMBZ5230BLT1 MMBZ5254BL MMBZ5263BL MMBZ |
Small Signal 4.7V 5% Small Signal 27V 5% 56V Zener Small Signal 33V 5% Small Signal 12V 5% Small Signal 13V 5% Small Signal 15V 5% Small Signal 20V 5%
|
ON Semiconductor
|
SI1012R-T1-GE3 |
500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
VISHAY SILICONIX
|
VN0104N3-G |
500 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 TO-92, 3 PIN
|
Supertex, Inc.
|
MSAFZ15N40A MSAFX14N100A FSE1850 FSE1350 FSE1540 F |
N Channel MOSFET; Package: CoolPack1; trr (nsec): 120; t(on) (nsec): 180; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 300; BVDSS (V): 400; Rq: 0.4; VSD (V): 1.5 SMALL SIGNAL, FET N Channel MOSFET; Package: CoolPack1; trr (nsec): 850; t(on) (nsec): 60; ID (A): 14; RDS(on) (Ohms): 0.82; PD (W): 310; BVDSS (V): 1000; Rq: 0.25; VGS(th) (V): 4; VSD (V): 1.5 SMALL SIGNAL, FET N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 35; ID (A): 18; RDS(on) (Ohms): 0.28; PD (W): 150; BVDSS (V): 500; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 27; ID (A): 13; RDS(on) (Ohms): 0.4; PD (W): 125; BVDSS (V): 500; Rq: 1; VSD (V): 1.4 SMALL SIGNAL, FET N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 35; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 125; BVDSS (V): 400; Rq: 1; VSD (V): 1.6 SMALL SIGNAL, FET N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 33; ID (A): 20; RDS(on) (Ohms): 0.21; PD (W): 150; BVDSS (V): 400; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET N Channel MOSFET; Package: TO-257; trr (nsec): 660; t(on) (nsec): 17; ID (A): 5; RDS(on) (Ohms): 1; PD (W): 50; BVDSS (V): 400; Rq: 2; VSD (V): 1.6 5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
VP0345N1 VP0345N2 VP0345ND VP0345N5 VP0350N2 |
1.5 A, 450 V, 7.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3 400 mA, 450 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39 450 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET DIE-3 1 A, 450 V, 7.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220 TO-220, 3 PIN 400 mA, 500 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39
|
Supertex, Inc. SUPERTEX INC
|
|