| PART |
Description |
Maker |
| APT12067JLL |
POWER MOS 7 1200V 17A 0.670 Ohm
|
Advanced Power Technology
|
| ISL9K18120 ISL9K18120G3 |
18A, 1200V Stealth Dual Diode
18A 1200V Stealth Dual Diode
18A, 1200V Stealth⑩ Dual Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| APT1201R5B APT1201R5BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1200V 10A 1.500 Ohm
|
http://
ADPOW[Advanced Power Technology]
|
| FDMC8678S |
N-Channel Power Trench? SyncFET TM 30V, 18A, 5.2mΩ
N-Channel Power Trench㈢ SyncFET TM 30V, 18A, 5.2mヘ
|
Fairchild Semiconductor
|
| IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR |
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A)
Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)
|
IRF[International Rectifier]
|
| IRFR5505 IRFU5055 IRFU5505 IRFRU5505 IRFR5505PBF I |
P Channel Surface Mount HEXFET Power MOSFET(P娌??琛ㄨ创??EXFET???MOS?烘?搴??)
-55V Single P-Channel HEXFET Power MOSFET in a I-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package
Power MOSFET(Vdss=-55V, Rds(on)=0.11ohm, Id=-18A)
HEXFET? Power MOSFET
|
IRF[International Rectifier]
http://
|
| R6018ANX12 |
Nch 600V 18A Power MOSFET
|
Rohm
|
| 18N50L-TF2-T 18N50G-TQ2-T 18N50G-TF1-T 18N50L-TQ2- |
18A, 500V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 18N40 18N40G-TF1-T 18N40G-T47-T 18N40G-TA3-T 18N40 |
18A, 400V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
