| PART |
Description |
Maker |
| BUL146FG BUL146G |
Bipolar Power TO220FP NPN 6A 400V; Package: TO-220 3 LEAD FULLPAK; No of Pins: 3; Container: Rail; Qty per Container: 50 6 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
SWITCHMODE NPN Bipolar Power Transistor
|
ON Semiconductor
|
| IRG4BC29F IRG4BC30F IRG4BC30 |
600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) 绝缘栅双极晶体管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.59V，@和VGE \u003d 15V的，集成电路\u003d 17A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRGBC20F |
600V Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| IRGBC30U |
600V Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| IRG4BC30KD-S IRG4BC30KD-STRR IRG4BC30KDS IRG4BC30K |
600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|
| EN3096A 2SC4489T-AN |
Bipolar Transistor
Bipolar Transistor High breakdown voltage, large current capacity
|
ON Semiconductor
|
| BFR340T |
RF-Bipolar - NPN Silicon RF transistor in SC75 package ideal for Low Noise Amplifiers and Oscillators
|
INFINEON[Infineon Technologies AG]
|
| BFR360L3 |
RF-Bipolar - NPN Silicon RF transistor in TSLP-3 package ideal for Oscillators and VCO Modules up to 4GHz
|
Infineon Technologies AG
|
| IRG4PC60F |
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| IRG4PH40U |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AC
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管（VCES和\u003d 1200伏，的Vce（on）典\u003d 2.43V，@和VGE \u003d 15V的，集成电路\u003d 21A条）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| BFS466L6 BFS466L6E6327 |
NPN Silicon RF TWIN Transistor NPN硅射频双晶体
RF-Bipolar - Dual NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules
|
INFINEON[Infineon Technologies AG]
|
