| PART |
Description |
Maker |
| MMBD452LT1G |
Dual Hot−Carrier Diodes Schottky Barrier Diodes SILICON, LOW BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE, TO-236AB
|
ON Semiconductor
|
| BAT54A-AE3-R BAT54C-AE3-R BAT54C-AL3-R BAT54S-AE3- |
SCHOTTKY BARRIER (DUAL) DIODES 肖特基（双）二极
SCHOTTKY BARRIER (DUAL) DIODES 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
Comchip Technology
|
| MA2SE01 |
Schottky Barrier Diodes (SBD)
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
|
Panasonic Semiconductor
|
| MA3Z793 MA793 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD)
|
Matsshita / Panasonic
PANASONIC[Panasonic Semiconductor]
|
| WSD705 WSD706 |
Surface Mount Schottky Barrier Diodes
SMALL SIGNAL SCHOTTKY DIODES 30m AMPERES 40 VOLTS
|
Weitron Technology
ETC
|
| HSB88WA |
Schottky Barrier Diodes for Detection and Mixer
SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING
|
HITACHI[Hitachi Semiconductor]
|
| CDBU0520-HF-12 CDBU0520-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=30V, V-R=20V, I-O=0.5A
SMD Schottky Barrier Diode
|
Comchip Technology
|
| HSB88WK |
Schottky Barrier Diodes for Detection and Mixer
SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING
|
HITACHI[Hitachi Semiconductor]
|
| 1PS70SB14 1PS70SB10_14_15_16_1 1PS70SB16 1PS70SB10 |
Schottky Barrier (Double) Diodes(肖特基势垒（双）二极
From old datasheet system
Schottky barrier double diodes
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| SFPJ-53 SFPA-53 SFPJ-73 SFPJ-63 SFPA-63 SFPA-73 SF |
Schottky Barrier Diodes (Surface Mount) 30V(30V肖特基势垒二极管（表贴型
Schottky Barrier Diodes (Surface Mount) 30V 3 A, SILICON, RECTIFIER DIODE
Schottky Barrier Diodes (Surface Mount) 30V 1 A, SILICON, SIGNAL DIODE
SWITCH, COMPACT, 10/100, 8PORT; 2 A, SILICON, RECTIFIER DIODE
|
http://
SANKEN[Sanken electric]
Sanken Electric Co.,Ltd.
Sanken Electric Co., Ltd.
|
| BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSE |
Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Schottky barrier double diodes
|
NXP Semiconductors / Philips Semiconductors
PHILIPS[Philips Semiconductors]
|
| BAS40-04 BAS40-04LT1G BAS40-04LT1 BAS40-04L |
Dual Series Schottky Barrier Diode
SCHOTTKY BARRIER DIODES
|
ONSEMI[ON Semiconductor]
|
