| PART |
Description |
Maker |
| HYMP564S648-E3 HYMP564S648-C4 HYMP532S646-E3 HYMP5 |
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver.
DDR2 SDRAM - SO DIMM 256MB
DDR2 SDRAM - SO DIMM 512MB
DDR2 SDRAM - SO DIMM 1GB
|
HYNIX[Hynix Semiconductor]
|
| K4S560832D-TC1H K4S560832D-TC1L K4S560832D-TC7A K4 |
32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| NT256D64S88A2GM NT256D64S88A2GM-7K NT256D64S88A2GM |
256Mb: 32Mx64 unbuffered DDR SO-DIMM module based 32Mx8 SDRAM
200pin One Bank Unbuffered DDR SO-DIMM 200pin一个银行缓冲的DDR SO - DIMM插槽
|
NANYA
ETC
Electronic Theatre Controls, Inc.
|
| HDD32M72D9RPW-13A HDD32M72D9RPW-13B |
DDR SDRAM Module 256Mbyte (32Mx72bit), based on 32Mx8, 4Banks 8K Ref., 184Pin-DIMM with PLL & Register
DDR SDRAM Module 256Mbyte (32Mx72bit), based on 32Mx8, 4Banks 8K Ref., 184Pin-DIMM with PLL & Register 256MB的DDR SDRAM内存模块2Mx72bit），基于2Mx8Banks 8K的参考。，184Pin - DIMM内存的锁相环
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
| HYMD132G725B8M-H HYMD132G725B8M-K HYMD132G725B8M-L |
DDR SDRAM - Registered DIMM 256MB
SDRAM|DDR|32MX72|CMOS|DIMM|184PIN|PLASTIC
Low Profile Registered DDR SDRAM DIMM
|
Hynix Semiconductor
|
| HMT82GV7MMR4C-G7 HMT41GV7MFR4C-G7 HMT82GV7MMR4C-H9 |
DDR3 SDRAM VLP Registered DIMM Based on 4Gb M-die
|
Hynix Semiconductor
|
| HMT41GV7CMR4A-H9 HMT325V7CFR8A HMT325V7CFR8A-H9 HM |
DDR3L SDRAM VLP Registered DIMM Based on 2Gb C-die
|
Hynix Semiconductor
|
| M368L2923MT1 |
128Mx64 DDR SDRAM 184pin DIMM based on 64Mx8 Data Sheet
|
Samsung Electronic
|
| M368L1714DT1 |
16Mx64 DDR SDRAM 184pin DIMM based on 8Mx16 Data Sheet
|
Samsung Electronic
|
| M381L3313BT1 |
32Mx72 DDR SDRAM 184pin DIMM based on 16Mx8 Data Sheet
|
Samsung Electronic
|
