| PART |
Description |
Maker |
| WME128K8-120DEI WME128K8-140DEI WME128K8-140DEIA W |
120ns; 5.5V power supply; 128K x 8 CMOS monolithic EEPROM, SMD 5962-96796
140ns; 5.5V power supply; 128K x 8 CMOS monolithic EEPROM, SMD 5962-96796
250ns; 5.5V power supply; 128K x 8 CMOS monolithic EEPROM, SMD 5962-96796
300ns; 5.5V power supply; 128K x 8 CMOS monolithic EEPROM, SMD 5962-96796
200ns; 5.5V power supply; 128K x 8 CMOS monolithic EEPROM, SMD 5962-96796
150ns; 5.5V power supply; 128K x 8 CMOS monolithic EEPROM, SMD 5962-96796
|
White Electronic Designs
|
| EDI8L32128C12AI EDI8L32128C15AI EDI8L32128C20AI ED |
15ns; 5V power supply; 128K x 32 CMOS high speed static RAM
20ns; 5V power supply; 128K x 32 CMOS high speed static RAM
17ns; 5V power supply; 128K x 32 CMOS high speed static RAM
|
White Electronic Designs
|
| IS61LV12816LL-12T IS61LV12816LL-12BI IS61LV12816LL |
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 12 ns, PQFP44
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 12 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
| GS84032AB-180 GS84018AB-180 GS84036AB-180 GS84036A |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256 × 1828K的3228K的36 4Mb的同步突发静态存储器
256K x 18/ 128K x 32/ 128K x 36 4Mb Sync Burst SRAMs
Time-Delay Relay; Contacts:SPST-NC; Time Range:0.1 - 60 sec.; Mounting Type:Panel; Timing Function:Delay-On-Break; Supply Voltage:12VDC; Time Range Max:60s; Time Range Min:0.1s
|
ETC
Electronic Theatre Controls, Inc.
|
| IDT71T024L200PZI IDT71T024 IDT71T024L150PZ IDT71T0 |
LOW POWER 2V CMOS SRAM 1 MEG (128K x 8-BIT) 128K X 8 STANDARD SRAM, 150 ns, PDSO32
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| MX27C1000A MX27C1000AMC-10 MX27C1000AMC-12 MX27C10 |
1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 90 ns, PQCC32
1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 90 ns, PDIP32
Single Output LDO, 3.0A, Fixed(1.5V), Fast Transient Response, Low Quiescent Current 5-DDPAK/TO-263 -40 to 125
|
Macronix International Co., Ltd.
MCNIX[Macronix International]
|
| LH532000B LH532000BT |
CMOS 2M (256K x 8/128K x 16) MROM 200万的CMOS56 × 8/128K × 16MROM
LH532000BT CMOS 1M (128K x 8) Mask Programmable ROM 48-pin TSOP
|
Sharp, Corp.
Sharp Corporation
Sharp Electrionic Components
Sharp Electronics Corp.
|
| 28C011TRT1FS 28C011TRPFS 28C011TRPFS-20 28C011TRPF |
1 Megabit (128K x 8-Bit) EEPROM 1兆位128K的8位）的EEPROM
1 Megabit (128K x 8-Bit) EEPROM 1兆位28K的8位）的EEPROM
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32
CONNECTOR ACCESSORY
POT 100K OHM THUMBWHEEL CERM ST
|
http://
NXP Semiconductors N.V.
Maxwell Technologies, Inc
|
| IS61LV12816L |
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
|
Integrated Silicon Solution, Inc
|
| AT28C010E-12FM/883 AT28C010E-12EC AT28C010-12EM AT |
120NS, 32FLTPCK, 883C; LEV B COMPLIANT(EEPROM) 128K X 8 EEPROM 5V, 120 ns, CDFP32
128K X 8 EEPROM 5V, 120 ns, CQCC32
120NS, 32 LCC, MIL TEMP(EEPROM)
128K X 8 EEPROM 5V, 150 ns, CDFP32
128K X 8 EEPROM 5V, 200 ns, CDIP32
128K X 8 EEPROM 5V, 250 ns, CDIP32
|
Atmel, Corp.
ATMEL CORP
|
| MURB1520-1PBF MURB1520-1TRL MURB1520-1TRLPBF MURB1 |
Ultrafast Rectifier ( trr = 35ns , IF(AV) = 15Amp , VR = 200V )
|
International Rectifier
|
