| PART |
Description |
Maker |
| MHW8222B |
MHW8222B 860 MHz, 22.7 dB Gain, 128-Channel CATV Amplifier Module
|
Motorola
|
| BGD804 BGD804112 |
860 MHz, 20 dB gain power
|
NXP Semiconductors N.V.
Philips
|
| BGD812 BGD81201 |
860 MHz, 18.5 dB gain power doubler amplifier
|
NXP Semiconductors
Philips
|
| BGD902L BGD902L_3 |
860 MHz, 18.5 dB gain power doubler amplifier
From old datasheet system
|
Philips
|
| BGD816L BGD816L_5 BGD816L01 |
860 MHz, 21.5 dB gain power doubler amplifier
From old datasheet system
|
NXP Semiconductors
Philips
|
| BGY883_4 BGY883-2015 BGY883 |
From old datasheet system
860 MHz, 15 dB gain push-pull amplifier
|
Philips
Quanzhou Jinmei Electronic ...
|
| MHW8205 |
MHW8205 860 MHz, 20.2 dB Gain, 128-Channel CATV Amplifier Module
|
Motorola
|
| BGD902MI BGD902 |
CATV amplifier modules 40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
860 MHz, 18.5 dB gain power doubler amplifier
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BGD802 |
Hybrid amplifier module operating at a supply voltage of 24 V (DC). BGD802<SOT115J|<<<1<Always Pb-free,;BGD802/02<SOT115J|<<<1<Always Pb-free,;
860 MHz, 18.5 dB gain power doubler amplifier
|
NXP Semiconductors N.V.
|
| PTF10133 |
85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 85瓦，860-960兆赫GOLDMOS场效应晶体管
85 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| ANPC-171G ANPC-176G ANPC-174G ANPC-175G ANPC-172G |
Transformer, CCFL, SMT, RoHS
2400 MHz - 2500 MHz ANTENNA-OTHER, 7 dBi GAIN, 70 deg 3dB BEAMWIDTH
1710 MHz - 1880 MHz ANTENNA-OTHER, 7 dBi GAIN, 70 deg 3dB BEAMWIDTH
1850 MHz - 1990 MHz ANTENNA-OTHER, 7 dBi GAIN, 70 deg 3dB BEAMWIDTH
Picocell Antennas 微微蜂窝天线
|
M/A-COM Technology Solutions, Inc.
Method Electronics, Inc.
3M Company
霍尼韦尔
FIBOX
Advanced Interconnections, Corp.
|
| MAFRIN0494 |
Single Junction Gull Wing Circulator 860 MHz-960 MHz
|
Tyco Electronics
|
