| PART |
Description |
Maker |
| ML9XX14 |
From old datasheet system
InGaAsP DFB-LD with EA modulator
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NX8563LB429 NX8563LB429-BA NX8563LB429-CA NX8563LB |
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS 连续光源InGaAsP的应变量子阱激光器激光二极管模块D -波分复用应用
CONVERTER DC-DC 1W 5V/14V DUAL 连续光源InGaAsP的应变量子阱激光器激光二极管模块的D -波分复用应用
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS 连续光源InGaAsP的应变量子阱激光器激光二极管模块的D -波分复用应用
ER 8C 8#12 SKT RECP LINE
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| ML9XX17 ML9XX17SERIES |
InGaAsP MQW-DFB LASER DIODE WITH EA MODULATOR
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| KLT-255444 |
1550nm InGaAsP strained MQW 1.25Gbps DFB LD TO CAN
|
KODENSHI KOREA CORP.
|
| NX6301SH NX6301SI NX6301SJ NX6301SK NX6301GK NX630 |
1310 nm InGaAsP MQW DFB laser diode for 155 Mb/s and 622 Mb/s applications.
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
|
NEC
CEL[California Eastern Labs]
|
| NX6307 NX63067H CALIFORNIAEASTERNLABORATORIES-NX63 |
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s APPLICATIONS
|
California Eastern Laboratories
|
| NX63067H NX63067K NX6307GH NX6307GK NX6307 |
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s APPLICATIONS
|
CEL[California Eastern Labs]
|
| ML9XX1104 ML925B11F |
Notice : Some parametric limits are subject to change InGaAsP DFB LASER DIODES
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Semicon...
|
| NX8313UD-AZ NX8313UD |
1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
|
CEL[California Eastern Labs]
|
