PART |
Description |
Maker |
V53C102AK70 V53C102AK70L V53C102AK10 V53C102AK10L |
x1 Static Column Mode DRAM x1静态列模式DRAM
|
ON Semiconductor
|
HM514402BZ-7 HM514402BS-7 HM514402BLS-7 |
x4 Static Column Mode DRAM x4静态列模式DRAM
|
EPCOS AG
|
UPD4217412V-60 UPD4216412V-60 UPD4216412LE-60 UPD4 |
x4 Static Column Mode DRAM x4静态列模式DRAM
|
Advanced Interconnections, Corp.
|
MT4C1026DJ-8 |
1M X 1 STATIC COLUMN DRAM, 80 ns, PDSO20
|
|
M5M44258-10 M5M44258-7 M5M44258-8 M5M44258BP M5M44 |
STATIC COLUMN MODE 1048576-BIT (262144-WORD BY 4-BIT) DYNAMIC RAM
|
Mitsubishi Electric Semiconductor
|
AEPDH1M8LB-85 AEPDS1M8LB-85N AEPDS1M8LB-85P AEPDS1 |
Low Power, Low Noise, Quad Universal Filter Building Block; Package: SO; No of Pins: 16; Temperature Range: 0°C to 70°C Low Power, Low Noise, Quad Universal Filter Building Block; Package: SO; No of Pins: 24; Temperature Range: 0°C to 70°C Low Power, Low Noise, Quad Universal Filter Building Block; Package: SO; No of Pins: 16; Temperature Range: 0°C to 70°C x8内存,未定义建筑 x8 DRAM ModuleUndefined Architecture x8内存,未定义建筑 x8 Page Mode DRAM Module x8页面模式内存模块 x8 Static Column Mode DRAM Module x8静态列模式DRAM模块 x8 Nibble Mode DRAM Module x8半字节模式记忆体模组
|
Lin Engineering, Inc. Unisonic Technologies Co., Ltd. Sullins Connector Solutions, Inc. Cypress Semiconductor, Corp.
|
UPD4265400G7-A50 UPD4265400G7-A60 UPD4265400G7-A70 |
x4 Fast Page Mode DRAM x4快速页面模式的DRAM 128K x 8 Static RAM x4FastPageModeDRAM
|
|
GM71V17400CT-6 GM71V17400CCL |
x4 Fast Page Mode DRAM 4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M
|
|
MT4C4001JC-12IT MT4C4001JC-10883C MT4C4001JC-7883C |
1 meg x 4 DRAM fast page mode DRAM
|
Austin Semiconductor
|
MT4C4001JCZ-10_883C MT4C4001JCZ-10_IT MT4C4001JCZ- |
1 MEG x 4 DRAM Fast Page Mode DRAM
|
AUSTIN[Austin Semiconductor]
|