| PART |
Description |
Maker |
| AM90CL255-08JC AM90CL255-15JC AM90CL255-12PC |
256K X 1 NIBBLE MODE DRAM, 80 ns, PQCC18
256K X 1 NIBBLE MODE DRAM, 150 ns, PQCC18
256K X 1 NIBBLE MODE DRAM, 120 ns, PDIP16
|
ADVANCED MICRO DEVICES INC
|
| AEPDS4M8LB-80 AEPDH4M8LB-80 AEPDS4M8LB-80S AEPDS4M |
x8 Nibble Mode DRAM Module x8半字节模式记忆体模组
x8 Page Mode DRAM Module x8页面模式内存模块
x8 Static Column Mode DRAM Module x8静态列模式DRAM模块
x8 DRAM ModuleUndefined Architecture x8内存，未定义建筑
|
Analog Devices, Inc.
TOKO, Inc.
Altera, Corp.
|
| MT4C4001JECJ-7/IT MT4C4001JECJ-7/XT MT4C4001JECG-8 |
1 MEG x 4 DRAM Fast Page Mode DRAM 1M X 4 FAST PAGE DRAM, 120 ns, CDSO20
1 MEG x 4 DRAM Fast Page Mode DRAM 1M X 4 FAST PAGE DRAM, 70 ns, CDSO20
1 MEG x 4 DRAM Fast Page Mode DRAM 1M X 4 FAST PAGE DRAM, 70 ns, CDIP20
1 MEG x 4 DRAM Fast Page Mode DRAM 1M X 4 FAST PAGE DRAM, 120 ns, CZIP20
|
Austin Semiconductor, Inc
AUSTIN SEMICONDUCTOR INC
|
| GM71C16163CCL GM71S16163CCL GM71CS16400CLJ-6 GM71C |
1Mx16|5V|4K|5/6|FP/EDO DRAM - 16M
x4 Fast Page Mode DRAM x4快速页面模式的DRAM
|
Electronic Theatre Controls, Inc.
Rochester Electronics, LLC
Integrated Silicon Solution, Inc.
|
| AS4C256K16F0-25JC AS4C256K16F0-25JI AS4C256K16F0-2 |
5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time
x16FastPageModeDRAM
5V 256K X 16 CMOS DRAM (Fast Page Mode)
5V 256K x 16 CM0S DRAM (fast page mode), 35ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 50ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time
|
Alliance Semiconductor Corporation
|
| MT4C4001JECJ-10/883C MT4C4001JECJ-10/IT MT4C4001JE |
1 MEG x 4 DRAM Fast Page Mode DRAM
|
Austin Semiconductor
http://
|
| AS4C4M4F0-50JC AS4C4M4F0-50JI AS4C4M4F0-50TC AS4C4 |
x4 Fast Page Mode DRAM
5V 4M x 4 CMOS DRAM (Fast Page mode) 5V米4的CMOS的DRAM（快速页模式
|
Alliance Semiconductor, Corp.
|
| GM71V17403C GM71V17403C-5 GM71V17403C-6 GM71V17403 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M
x4 EDO Page Mode DRAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| UPD4216160LLE-A80 UPD4217400LG3-A80 UPD42S16400LG3 |
x16 Fast Page Mode DRAM
x4 Fast Page Mode DRAM x4快速页面模式的DRAM
|
EPCOS AG
|
| IBM0117805MT3-70 IBM0117805T3-6R IBM0117805BT3-70 |
x8 EDO Page Mode DRAM
2M*8 11/10 EDO DRAM 20081/ 10动态随机存取存储器
|
IBM Microeletronics
International Business Machines, Corp.
|
| IS41LV16100A-60TI IS41LV16100A-60K IS41LV16100A-50 |
RES 0805 1/8W 5% 2.4K 1M X 16 EDO DRAM, 60 ns, PDSO44
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 60 ns, PDSO42
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 50 ns, PDSO42
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 60 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
| MB8504E032AA-60 MB8504E032AA-70 |
4 M×32 BITS Hyper Page Mode DRAM Module(CMOS 4 M×32 位超级页面存取模式动态RAM模块) 4米32位超页模式内存的CMOS米32位超级页面存取模式动态内存模块）
4 M?32 BITS Hyper Page Mode DRAM Module(CMOS 4 M?32 浣??绾ч〉?㈠???ā寮????AM妯″?)
|
Fujitsu, Ltd.
Fujitsu Limited
|
