PART |
Description |
Maker |
MBM29F200BA12 MBM29F200TA12 |
2M (256K×8/128K×16) Bit Flash Memory(V 电源电压256K×8/128K×16闪速存储器) 200万(256K × 8/128K × 16)位快闪记忆体(V的电源电56K × 8/128K × 16闪速存储器 2M (256K?8/128K?16) Bit Flash Memory(??V ?垫??靛?256K?8/128K?16???瀛???ī
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Fujitsu, Ltd. Fujitsu Limited
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CY14E102L-BA45XCT CY14E102N-BA45XCT CY14E102L-ZS25 |
2-Mbit (256K x 8/128K x 16) nvSRAM
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Cypress Semiconductor
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IDT71V2576S IDT71V2578S IDT71V2578YS150BG IDT71V25 |
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 4.2 ns, PBGA119 IC LOGIC 3253 LOW-VOLTAGE DUAL 1-OF-4 FET MULTIPLEXER/DEMULTIPLEXER -40 85C TSSOP-16 96/TUBE 256K X 18 CACHE SRAM, 4.2 ns, PBGA119 RECTIFIER FAST-RECOVERY SINGLE 1A 200V 30A-ifsm 1V-vf 50ns 5uA-ir DO-41 5K/REEL-13 128K X 36 CACHE SRAM, 4.2 ns, PBGA165 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.5VI / O的流水线输出,脉冲计数器,单周期取消 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 3.8 ns, PBGA119 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 4.2 ns, PBGA165 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 4.2 ns, PBGA119 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 4.2 ns, PBGA165 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.8 ns, PBGA165 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.8 ns, PBGA119 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.8 ns, PQFP100 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 4.2 ns, PQFP100 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 3.8 ns, PQFP100 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 4.2 ns, PQFP100 IC LOGIC 3257 LOW-VOLTAGE 4-BIT 1-OF-2 FET MULTIPLEXER/DEMULTIPLEXER -40 85C QSOP-16 97/TUBE
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http:// Integrated Device Technology, Inc.
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SST29EE020-120-4C-WH SST29LE020-250-4C-U2 SST29VE0 |
7.3728MHZ CRYSTAL -40/85''C FLUKE-741B 120 REFURBISHED BY NEWARK KJA 79C 79#22 PIN RECP 128Kx8 EEPROM PSoC® Mixed-Signal Array 2 Mbit (256K x8) Page-Mode EEPROM 2兆位256K × 8)页模式的EEPROM 2 Mbit (256K x8) Page-Mode EEPROM 2兆位256K × 8)页模式EEPROM DSUB 13X3 F PCR/A G 50OHM T 2兆位56K × 8)页模式的EEPROM IC SMD AN2135SC CONTROLLER USB 256K X 8 EEPROM 5V, 120 ns, PDSO32 2 Mbit (256K x8) Page-Mode EEPROM 2兆位56K × 8)页模式的EEPROM 2 Mbit (256K x8) Page-Mode EEPROM 2兆位56K × 8)页模式EEPROM
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Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
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GS840E18AB-190 GS840E18AT-190I |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 7.5 ns, PBGA119 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 7.5 ns, PQFP100
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GSI Technology, Inc.
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SST29EE010-70-4C-UH SST29VE010-70-4C-UH SST29LE010 |
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PQCC32 1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PDSO32 1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8)页模式EEPROM 1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 90 ns, PQCC32 1 Mbit (128K x8) Page-Mode EEPROM 1兆位128K的8)页模式的EEPROM 1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8)页模式的EEPROM 1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
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Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
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AM29F200BB55EI AM29F200BT-90SI AM29F200BT-55EC AM2 |
2 Mb (256K x 8, 128K x 16) Boot Sector, Flash Memory 256K X 8 FLASH 5V PROM, 55 ns, PDSO48 FLASH 128K X 16 TSOP-48
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Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
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LH532000B LH532000BT |
CMOS 2M (256K x 8/128K x 16) MROM 200万的CMOS56 × 8/128K × 16MROM LH532000BT CMOS 1M (128K x 8) Mask Programmable ROM 48-pin TSOP
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Sharp, Corp. Sharp Corporation Sharp Electrionic Components Sharp Electronics Corp.
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ST1335 ST1355-CW4 ST1335-BD10 ST1335-BD15 ST1335-B |
5-CONTACT MEMORY CARD IC 272 BIT EEPROM WITH ADVANCED SECURITY MECHANISMS 5V, 3.3V, ISR High-Performance CPLDs NX2LP DEVELOPMENT KIT KIT DEV MOBL-USB FX2LP18 MoBL® 4-Mbit (256K x 16) Static RAM MoBL® 1-Mbit (64K x 16) Static RAM MoBL® 1 Mbit (128K x 8) Static RAM MoBL® 2-Mbit (128K x 16) Static RAM (ST1335/13361355) 5-Contact Memory Card IC 272-bit EEPROM with Advanced Security Mechanisms MoBL® 1-Mbit (64K x 16) Static RAM EEPROM 5V, 3.3V, ISR™ High-Performance CPLDs EEPROM MoBL® 4-Mbit (256K x 16) Static RAM EEPROM 5-Contact Memory Card IC 272-bit EEPROM with Advanced Security Mechanisms 5,联系记忆卡IC 272位具有高级安全机制的EEPROM
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SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 ST Microelectronics STMicroelectronics N.V.
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GS840F18AGT-7.5I GS840F36AGT-7.5I |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 7.5 ns, PQFP100 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 7.5 ns, PQFP100
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GSI Technology, Inc.
|
CY7C0853V-133BBXI CY7C0852AV-167AXC CY7C0851AV-133 |
FLEx36TM 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.0 to 3.6 V; Speed: 133 MHz 256K X 36 DUAL-PORT SRAM, 4.7 ns, PBGA172 FLEx36™ 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM 128K X 36 DUAL-PORT SRAM, 4 ns, PQFP176 FLEx36™ 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM 64K X 36 DUAL-PORT SRAM, 4 ns, PQFP176 FLEx36™ 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM 256K X 36 DUAL-PORT SRAM, 4.7 ns, PBGA172
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Cypress Semiconductor, Corp.
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