| PART |
Description |
Maker |
| CM600HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Powerex, Inc.
|
| AN520 |
CMOS ADVANCED GALVANIC ISOLATORS FOR MEDICAL ELECTRONICS
|
Silicon Laboratories
|
| HCS11MS FN3048 |
Radiation Hardened Triple 3-Input AND Gate(抗辐射三3输入与门) HC/UH SERIES, TRIPLE 3-INPUT AND GATE, UUC14
From old datasheet system
AND-Gate, 3-Input, Triple, Rad-Hard, High-Speed, CMOS, Logic
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| RM600HE-90S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM900DB-90S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM600DG-130S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| LTC1163 LTC1163C LTC1163CN8 LTC1163CS8 LTC1165 LTC |
Triple 1.8V to 6V High-Side MOSFET Drivers .8VV的高边MOSFET驱动
Triple 1.8V to 6V High-Side MOSFET Drivers 3 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP8
From old datasheet system
|
Linear Technology, Corp.
Linear Technology Corporation
LINER[Linear Technology]
|
| RM600DY-66S |
HIGH POWER SWITCHING USE INSULATED TYPE HVDi (High Voltage Diode) Module
|
Mitsubishi Electric Semiconductor
|
| BM60014FV-C BM60014FV-CE2 BM60014FV-E2 |
Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation
Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation
|
Rohm
|
| BTA416Y-800B BTA416Y-800C BTA416Y-600B BTA416Y-600 |
16 A Three-quadrant triacs, insulated, high commutation, high temperature
|
NXP Semiconductors N.V.
|
| BM6102FV-C BM6102FV-CE2 |
Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation
|
Rohm
|
