| PART |
Description |
Maker |
| K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187
; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No
128Mb SDRAM, 3.3V, LVTTL, 166MHz
128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4M51163PC-X |
8M x 16Bit x 4 Banks Mobile SDRAM
|
Samsung semiconductor
|
| T4312816B-6S |
8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM
|
Taiwan Memory Technology
|
| T431616D T431616D-5C T431616D-5CG T431616D-5S T431 |
1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
|
Taiwan Memory Technology
|
| K4S641633F-GLN |
1M x 16Bit x 4 Banks SDRAM in 54CSP Data Sheet
|
Samsung Electronic
|
| IC42S16400 IC42S16400-7TI IC42S16400-7TIG IC42S164 |
DYNAMIC RAM
1M x 16Bit x 4 Banks (64-MBIT) SDRAM
|
ICSI[Integrated Circuit Solution Inc]
|
| K4M64163PH-RG K4M64163PH K4M64163PH-RBF1L K4M64163 |
1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP 100万16 × 4银行4CSP移动SDRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4M561633G K4M561633G-RBF1H K4M561633G-RBF1L K4M56 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4M64163PK K4M64163PK-BE75 K4M64163PK-RE75 K4M6416 |
4M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 100万16 × 4银行4FBGA移动SDRAM
|
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4S281632B-N K4S281632B-NC_L1H K4S281632B-NC_L1L K |
128Mb SDRAM, 3.3V, LVTTL, 100MHz
2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP 200万16 × 4银行同步DRAM在sTSOP
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4S64163LH-RE K4S64163LH-RBE K4S64163LH-N K4S64163 |
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC 0 to 70
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
