| PART |
Description |
Maker |
| FSYC260R4 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FS |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 46 A, 200 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射，抗SEGR N沟道功率MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| HS-1410RH 5962F9851801VXC HS9-1410RH-Q |
Radiation Hardened/ High Speed/ Low Power/ Current Feedback Op Amp with Output Disable
CAP 4-ARRAY 47000PF 16V X7R 1206
Radiation Hardened, High Speed, Low
Power, Current Feedback Op Amp with
Output Disable(抗辐射高速、低功耗电流反馈放大器（输出禁止）)
Radiation Hardened, High Speed, Low Power, Current Feedback Op Amp with Output Disable OP-AMP, PDFP10
|
Intersil Corporation
Intersil, Corp.
|
| JANSR2N7408 FN4637 |
Quadruple 2-Input Positive-NAND Gates 14-VQFN -40 to 85
Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system
Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant,N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| 5962-04238 5962-04239 5962-04240 5962-04241 5962-0 |
10W Total Output Power 28 Vin 3.3 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04238
10W Total Output Power 28 Vin 5 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04239
10W Total Output Power 28 Vin 12 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04240
10W Total Output Power 28 Vin 15 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04241
10W Total Output Power 28 Vin /-5 Vout Dual DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04242
10W Total Output Power 28 Vin /-12 Vout Dual DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04243
10W Total Output Power 28 Vin /-15 Vout Dual DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04244
|
International Rectifier
|
| FSTJ9055R4 FSTJ9055D FSTJ9055D1 FSTJ9055D3 FSTJ905 |
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 62 A, 60 V, 0.023 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| IRHY57230CMSE |
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package
RADIATION HARDENED POWER MOSFET
|
International Rectifier
|
| IRHNA57264SE |
250V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-2 package
RADIATION HARDENED POWER MOSFET
|
International Rectifier
|
| IRHM7130 IRHM3130 IRHM8130 IRHM4130 |
100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
RADIATION HARDENED POWER MOSFET THRU-HOLE
|
IRF[International Rectifier]
|
| IRHN7130 IRHN7130-15 |
Simple Drive Requirements
RADIATION HARDENED POWER MOSFET
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
|
International Rectifier
|
| XQVR1000-4CG560M XQVR1000-4CG560V XQVR600-4CB228M |
2.5V Radiation Hardened FPGAs 2.5V的抗辐射FPGA
QPro Virtex 2.5V Radiation Hardened FPGAs
|
Panduit, Corp.
Xilinx, Inc.
|
| 2N7632UC IRHLUC7630Z4 IRHLUC7670Z4 IRHLUC7670Z4-15 |
RADIATION HARDENED60V, Combination 1N-1P-CHANNELLOGIC LEVEL POWER MOSFET
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT
Simple Drive Requirements
|
International Rectifier
|
