PART |
Description |
Maker |
K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TC |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. 16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
UPD4216805LE-60 UPD4216805LE-50 UPD4216805LE-70 |
16M-BIT DYNAMIC RAM 2M-WORD BY 8-BIT, HYPER PAGE MODE
|
NEC
|
MC-4516DA727PFA-A75 MC-4516DA727 MC-4516DA727EFA-A |
16M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 DIMM-168 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
|
NEC, Corp. NEC Corp.
|
HYB514400BJ-BT60 Q67100-Q749 Q67100-Q750 Q67100-Q7 |
1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM 1M X 4 FAST PAGE DRAM, 70 ns, PDSO20 1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM 1M X 4 FAST PAGE DRAM, 80 ns, PDSO20 RES 121-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA
|
SIEMENS AG Siemens Semiconductor G...
|
MC-45V16AD642KS-A75 MC-45V16AD642KS |
16M-WORD BY 64-BIT VirtualChannelTM DYNAMIC RAM MODULE (SO DIMM)
|
Elpida Memory
|
MC-4516CA727EF-A75 |
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
NEC
|
MC-4516CB647EF-A75 MC-4516CB647PF-A75 MC-4516CB647 |
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
NEC Corp.
|
MB8516SR72CA-103LDG MB8516SR72CA-102DG MB8516SR72C |
16M x 72Bit Synchronous DRAM DIMM 16M X 72 BIT SYNCHRONOUS DYNAMIC RAM DIMM
|
Fujitsu Component Limited. Fujitsu Limited
|
HYB3164400T-60 HYB3165400T-60 HYB3164400T-50 HYB31 |
16M x 4-Bit Dynamic RAM High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD 0 to 70 Circular Connector; Body Material:Aluminum Alloy; Series:MS3116; Number of Contacts:11; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin 16M X 4 FAST PAGE DRAM, 60 ns, PDSO34
|
SIEMENS AG
|
MC-4516CA727XFA-A75 MC-4516CA727XFA |
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE 1,60072位同步动态随机存储器模块无缓冲型 CAP 1.5UF 600VDC POLY FILM AXIAL
|
Elpida Memory, Inc.
|