PART |
Description |
Maker |
K7I161882B |
(K7I163682B / K7I161882B) 1Mx18-bit DDRII CIO b2 SRAM
|
Samsung semiconductor
|
K7N161831B K7N163631B K7N163631B-QFCI25 K7N161831B |
512Kx36 & 1Mx18 Pipelined NtRAM 512Kx36 & 1Mx18 Pipelined NtRAM 512Kx36
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K7N161845M K7N163645M |
512Kx36 & 1Mx18-Bit Pipelined NtRAMTM 512Kx36 512Kx36 & 1Mx18-Bit Pipelined NtRAMTM
|
http:// Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
K7R161882B K7R163682B K7R160982B |
512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM 512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM 512Kx36
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K7I321884C K7I323684C |
1Mx36 & 2Mx18 DDRII CIO b4 SRAM
|
Samsung semiconductor
|
IS61QDP2B451236A1 IS61QDP2B451236A2 |
512Kx36 and 1Mx18 configuration available
|
Integrated Silicon Solu...
|
IS61QDPB451236A |
512Kx36 and 1Mx18 configuration available
|
Integrated Silicon Solu...
|
K7Q163664B10 K7Q161864B |
512Kx36 & 1Mx18 QDRTM b4 SRAM
|
Samsung semiconductor
|
K7N163601M K7N161801M |
512Kx36 & 1Mx18-Bit Pipelined NtRAM TM
|
SAMSUNG[Samsung semiconductor]
|
K7J163682B K7J161882B |
512Kx36 & 1Mx18 DDR II SIO b2 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|