PART |
Description |
Maker |
TE28F640J3 TE28F256J3 TE28F320J3C-110 TE28F128J3A- |
8M X 16 FLASH 2.7V PROM, 120 ns, PDSO56 Intel StrataFlash Memory (J3) Strata Flash Memory 256M 256M Strata Flash Memory
|
NUMONYX Intel Corporation
|
HN29V25611ANBSP HN29V25611A HN29V25611AT-50 |
256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
|
Renesas Electronics Corporation
|
K9E2G08U0M-Y K9E2G08U0M-F K9E2G08U0M-P K9E2G08U0M- |
256M x 8 Bits NAND Flash Memory
|
http:// SAMSUNG SEMICONDUCTOR CO. LTD.
|
K9K2G08U0A |
256M x 8 Bit NAND Flash Memory
|
Samsung Electronic Samsung semiconductor
|
MX25L25735F MX25L25735FMI10G MX25L25735FZ2I10G |
3V 256M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
MX25L25835E MX25L25835EMI10G |
256M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
S29GL128P90TFCR10 S29GL512P10TFIR20 S29GL256P90FAI |
128M X 1 FLASH 3V PROM, 90 ns, PDSO56 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56 512M X 1 FLASH 3V PROM, 100 ns, PDSO56 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 256M X 1 FLASH 3V PROM, 90 ns, PBGA64 256M X 1 FLASH 3V PROM, 90 ns, PBGA64 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64 1G X 1 FLASH 3V PROM, 110 ns, PDSO56 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56 256M X 1 FLASH 3V PROM, 90 ns, PDSO56 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 1G X 1 FLASH 3V PROM, 110 ns, PBGA64 1G X 1 FLASH 3V PROM, 110 ns, PBGA64 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 512M X 1 FLASH 3V PROM, 110 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 256M X 1 FLASH 3V PROM, 100 ns, PBGA64 128M X 1 FLASH 3V PROM, 100 ns, PBGA64 1G X 1 FLASH 3V PROM, 120 ns, PDSO56 1G X 1 FLASH 3V PROM, 130 ns, PDSO56 1G X 1 FLASH 3V PROM, 120 ns, PBGA64
|
Spansion, Inc. SPANSION LLC
|
K9W8G08U1M K9K4G16U0M K9K4G08U0M K9K4G08Q0M K9K4G1 |
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
ULQ2436M 2436 |
COUNTDOWN POWER TIMER COUNTDOWNPOWERTIMER Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:100ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Configuration:128K x 16; Memory Size:256MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes Audio Sample Rate Converter IC; IC Function:Audio Sample Rate Converter IC; Package/Case:28-SOIC; Leaded Process Compatible:No; No. of Channels:2; Operating Temp. Max:85 C; Operating Temp. Min:-40 C RoHS Compliant: Yes 的CountDown电源定时
|
ALLEGRO[Allegro MicroSystems] AllegroMicroSystems Allegro MicroSystems, Inc.
|
K9K4G08U1M |
256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
|
SAMSUNG
|
LH28F008SCHT LH28F008SCHT-85 LH28F008SCN-L120 LH28 |
8MBIT (1 MB x 8)Smart Voltage Flash Memory 40pin STSOP 8Mbit Flash Memory 8-MBIT(1 MB x 8) SmartVoltage Flash MEMORY 8MBIT (1 MB x 8)Smart Voltage Flash Memory 44pin PSOP
|
Sharp Electrionic Components
|