| PART |
Description |
Maker |
| DS2030Y-100 DS2030AB-70 DS2030Y-70 DS2030AB-100 |
100 ns, 4.5 V to 5.5 V, rechargeable 256k nonvolatile SRAM
70 ns, 4.75 V to 5.25 V, rechargeable 256k nonvolatile SRAM
70 ns, 4.5 V to 5.5 V, rechargeable 256k nonvolatile SRAM
100 ns, 4.75 V to 5.25 V, rechargeable 256k nonvolatile SRAM
|
MAXIM - Dallas Semiconductor
|
| DS1330AB DS1330Y |
256k Nonvolatile SRAM with Battery Monitor
|
MAXIM - Dallas Semiconductor
|
| DS1330WP-100IND DS1330WP-150 |
3.3V 256k Nonvolatile SRAM with Battery Monitor
|
MAXIM - Dallas Semiconductor
|
| DS1330YL DS1330BL-100 DS1330BL-100-IND DS1330BL-70 |
256K Nonvolatile SRAM with Battery Monitor
|
http://
Dallas Semiconductor
Dallas Semiconducotr
|
| DS1330WP-100IND |
3.3V 256k Nonvolatile SRAM with Battery Monitor 32K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA34
|
Maxim Integrated Products
|
| STK12C68-5KF35 STK12C68-5KF35I STK12C68-5KF35M STK |
8K x 8 AutoStore?/a> nvSRAM QuantumTrap?/a> CMOS Nonvolatile Static RAM
8K x 8 AutoStore垄芒 nvSRAM QuantumTrap垄芒 CMOS Nonvolatile Static RAM
8K x 8 AutoStore nvSRAM QuantumTrap CMOS Nonvolatile Static RAM
8K X 8 AUTOSTORE⒙ NVSRAM QUANTUMTRAP⒙ CMOS NONVOLATILE STATIC RAM
8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS Nonvolatile Static RAM
CAP 470PF 500V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
8K x 8 AutoStorenvSRAM QuantumTrapCMOS Nonvolatile Static RAM 8K的8自动存储非易失QuantumTrap⑩⑩的CMOS非易失性静态随机存储器
8K x 8 AutoStore??nvSRAM QuantumTrap??CMOS Nonvolatile Static RAM
8K X 8 NON-VOLATILE SRAM, 25 ns, PDIP28
8K X 8 NON-VOLATILE SRAM, 55 ns, PDSO28
8K X 8 NON-VOLATILE SRAM, 45 ns, CDIP28
|
SIMTEK
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
CYPRESS SEMICONDUCTOR CORP
|
| MBM29F400TA MBM29F400BA |
4M (512K×8/256K ×16) Bit Flash Memory(4M V 电源电压512K×8/256K ×16位闪速存储器)
4分（12k × 8/256K × 16）位闪存分单5V的电源电压为512k × 8/256K × 16位闪速存储器
|
Fujitsu Limited
|
| GS880V36BT-250 GS880V18BT-333 GS880V18BT-250 GS880 |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 5 ns, PQFP100
|
GSI Technology, Inc.
http://
|
| GS880E32AT-250 |
512K x 18, 256K x 32, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 32 CACHE SRAM, 5.5 ns, PQFP100
|
GSI Technology, Inc.
|
| MBM29LV400T MBM29LV400B |
CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16V 电源电压闪速存储器) 的CMOS 4分（12k × 8/256K × 16Falsh存储器（12k × 8/256K × 16位单5V的电源电压闪速存储器
|
Fujitsu Limited
Fujitsu, Ltd.
|
| X9312 X9312TP X9312TPI X9312TPM X9312TS X9312TSI X |
E2POT??Nonvolatile Digital Potentiometer
E2POTNonvolatile Digital Potentiometer E2POT⑩非易失数字电位
CAP,Mica,5pF,500VDC,.5-pF Tol,.5 pf Tol,.5-% Tol,.5 % Tol,100ppm-TC
E2POT⑩ Nonvolatile Digital Potentiometer
E2POT Nonvolatile Digital Potentiometer
E2POT?/a> Nonvolatile Digital Potentiometer
|
Electronic Theatre Controls, Inc.
XICOR[Xicor Inc.]
|
| A29002V-100 A29002-70 A29002L-70 A29002V-70 A29002 |
110ns 20mA 256K x 8bit CMOS 5.0V-only
70ns 20mA 256K x 8bit CMOS 5.0V-only
100ns 20mA 256K x 8bit CMOS 5.0V-only
120ns 20mA 256K x 8bit CMOS 5.0V-only
150ns 20mA 256K x 8bit CMOS 5.0V-only
90ns 20mA 256K x 8bit CMOS 5.0V-only
55ns 20mA 256K x 8bit CMOS 5.0V-only
|
AMIC Technology
|
