| PART |
Description |
Maker |
| K4N56163QF-GC37 K4N56163QF K4N56163QF-GC K4N56163Q |
256Mbit gDDR2 SDRAM
|
SAMSUNG[Samsung semiconductor]
|
| HY27US0856 HY27SS16561M HY27SS08561M HY27US08561M |
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
|
HYNIX[Hynix Semiconductor]
|
| HY27SS08561M HY27US16561M |
(HY27xSxx561M) 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
|
Hynix Semiconductor
|
| HYB18T256400AF-5 HYB18T256800AF-5 HYB18T256400AF-3 |
256Mbit Double Data Rate (DDR2) Component
|
Infineon
|
| HYB25D256160CC-5 HYB25D256160CT-5 HYB25D256160CT-6 |
256Mbit Double Data Rate (DDR) Components
|
Infineon
|
| V53C1256162VALS7 V53C1256162VALS7E V53C1256162VALS |
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16
|
N.A.
ETC[ETC]
|
| K4S560432A K4S560432A-TC_L75 K4S560432A-TC_L80 K4S |
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM16米x 4位4银行同步DRAM LVTTL
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM6米x 4位4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| V54C3256164VS V54C3256164VT V54C3256404VS V54C3256 |
256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4
3.3V, 2K refresh ultra-high performance 1M x 16 SDRAM 2 banks x 512Kbit x 16
|
Mosel Vitelic Corp
|
| S25FL128L S25FL256L |
256Mbit (32Mbyte)/128Mbit (16Mbyte),3.0 V FL-L Flash Memory
|
Cypress Semiconductor
|
| K4S561632C-TC75 K4S561632C K4S561632C-L1H K4S56163 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM
|
Samsung semiconductor
|
| K4N56163QF-GC37 K4N56163QF-GC30 K4N56163QF-GC25 |
256Mbit gDDR2 SDRAM 56Mbit GDDR2 SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Panasonic, Corp.
Samsung Semiconductor Co., Ltd.
|
