PART |
Description |
Maker |
MGFS45V2527 |
2.5 - 2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.5 - 2.7GHz频带功率30W国内MATCHD砷化镓场效应 2.5-2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
EIA1718-2P |
17.7-18.7GHz, Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
EIA1011-2P EIB1011-2P |
10.7-11.7GHz, 2W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
MGFX39V0717 |
10.7-11.7GHz Band 8W Internally MATCHD GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC36V7177A |
7.1 - 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC39V7177A |
7.1 - 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET 7.1 - 7.7GHz波段8瓦特内部匹配砷化镓场效应
|
Mitsubishi Electric, Corp. Mitsubishi Electric Semiconductor
|
MGFX36V0717 X360717 |
10.7 - 11.7GHz BAND 4W INTERNALLY MATCHD GaAs FET 10.7 - 11.7GHz频段4瓦国内MATCHD砷化镓场效应 From old datasheet system
|
Rohm Co., Ltd. Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
SY87724L SY87724LH1 |
3.3V AnyRateTM MUX/DEMUX Up to 2.7GHz From old datasheet system 3.3V AnyRate MUX/DEMUX Up to 2.7GHz
|
MICREL[Micrel Semiconductor] Micrel Semiconductor,Inc.
|
76342-350CLF 76342-302CLF 76342-302HLF 76342-402CL |
HOUSING MAT: THERMOPLASTIC GLASS FILLED
|
FCI connector
|
BC7-12 |
Absorbent Glass mat technology for efficient gas recombinatino
|
B. B. Battery Co., Ltd.
|