| PART |
Description |
Maker |
| IS42S16100A1 IS42S16100 IS42S16100-7T IS42S16100-1 |
512K WORDS X 16 BITS X 2 BANKS (16-MBIT) SYNCHRONOUS DYNAMIC RAM
16mb Synchronous Dynamic RAM: 512kx16x2
|
Integrated Silicon Solution, Inc
ISSI
|
| VG36128161BT VG36128401BT VG36128801BT |
CMOS Synchronous Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
| GLT5640AL16 GLT5640AL16-10TC GLT5640AL16-5.5TC GLT |
4M X 16 CMOS Synchronous Dynamic RAM
|
ETC[ETC]
|
| VG36644080/1641DTL-8H |
CMOS Synchronous Dynamic RAM
|
Vanguard International Semiconductor
|
| VG3617161ET VG3617161ET-6 VG3617161ET-7 VG3617161E |
CMOS Synchronous Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
| VG36256161A VG36256401A VG36256801A |
CMOS Synchronous Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
| VG36648041BT-10 VG36648041BT-7 VG36648041BT-8 VG36 |
CMOS Synchronous Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
| MH16S64PHB-6 B99031 |
1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM
From old datasheet system
1073741824-BIT ( 16777216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HM5216808CSERIES 5216808C |
1,048,576-word ′ 8-bit ′ 2-bank Synchronous Dynamic RAM
(SSTL-3)
2,097,152-word ′ 4-bit ′ 2-bank Synchronous Dynamic RAM
(SSTL-3)
From old datasheet system
|
hitachi
|
| 5216165 |
1,048,576-word ′ 8-bit ′ 2-bank Synchronous Dynamic RAM
(SSTL-3)
2,097,152-word ′ 4-bit ′ 2-bank Synchronous Dynamic RAM
(SSTL-3)
From old datasheet system
|
hitachi
|
| GM72V66841CLT GM72V66841CT GM72V66841CT_CLT GM72V6 |
2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
2097152 word x 8 bit x 4 bank synchronous dynamic RAM
|
etc
LG Semicon Co.,Ltd.
LG Semiconductor
|
| GM71V18163C GM71V18163C-5 GM71V18163C-6 GM71V18163 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 60ns
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor
|
