PART |
Description |
Maker |
CM75E3U-12H |
Chopper IGBTMOD 75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
CM75DU-12H |
Dual IGBTMOD 75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
APT43F60B2 APT43F60L |
N-Channel FREDFET Power FREDFET; Package: T-MAX™ [B2]; ID (A): 45; RDS(on) (Ohms): 0.15; BVDSS (V): 600; 45 A, 600 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi Corporation Microsemi, Corp.
|
IRFR9120 IRFU9120 FN3987 |
5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs(5.6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??) P Channel Power MOSFET From old datasheet system
|
INTERSIL[Intersil Corporation]
|
STP25NM60N STW25NM60N STB25NM60N STF25NM60N STB25N |
20 A, 600 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 20 A, 600 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC N-channel 600 V, 0.130 Ω , 21 A, MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247 N-channel 600 V, 0.130 Ω , 21 A, MDmesh?/a> II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247
|
http:// STMicroelectronics
|
APT15GT60BRG |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 15; 30 A, 600 V, N-CHANNEL IGBT, TO-247
|
Microsemi, Corp.
|
CM150TU-12H |
240 x 128 pixel format, CFL Backlight with power harness 150 A, 600 V, N-CHANNEL IGBT Six IGBTMOD 150 Amperes/600 Volts
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
CM150DY-12H |
Dual IGBTMOD 150 Amperes/600 Volts 150 A, 600 V, N-CHANNEL IGBT
|
Powerex Power Semicondu... Powerex Power Semiconductors Powerex, Inc.
|
IXSQ10N60B2D1 IXSH10N60B2D1 |
20 A, 600 V, N-CHANNEL IGBT TO-3P, 3 PIN 20 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp. IXYS CORP
|
STGW30NC60KD |
60 A, 600 V, N-CHANNEL IGBT, TO-247 30 A - 600 V - short circuit rugged IGBT
|
STMicroelectronics
|
APT50GT60BR APT50GT60SRG APT50GT60BRG |
Thunderbolt IGBT Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 52; 110 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
Microsemi Corporation http:// Microsemi, Corp.
|
STI30NM60N STW30NM60N STF30NM60N STP30NM60N STB30N |
25 A, 600 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC N-channel 600 V, 0.1 ヘ, 25 A, MDmesh⑩ II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK N-channel 600 V, 0.1 楼?, 25 A, MDmesh垄芒 II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK N-channel 600 V, 0.1 Ω, 25 A, MDmesh II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK N-channel 600 V, 0.1 Ω, 25 A, MDmesh?/a> II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK
|
STMicroelectronics
|
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