| PART |
Description |
Maker |
| PTF10009 |
85 Watts, 1.0 GHz GOLDMOS?/a> Field Effect Transistor
85 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
85 Watts, 1.0 GHz GOLDMOS⑩ Field Effect Transistor
85 Watts, 1.0 GHz GOLDMOSField Effect Transistor
85 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| SSM3J01T |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
| SSM3K02F |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 东芝场效应晶体管频道马鞍山类
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications
|
Toshiba Corporation
Toshiba, Corp.
Toshiba Semiconductor
|
| PTF10020 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON POWER MODULES AB
Ericsson Microelectronics
|
| PTF10007 |
35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 35瓦，1.0 GHz的GOLDMOS场效应晶体管
35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
35 Watts 1.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| TPC8401 |
80 AMP MINI-ISO AUTOMOTIVE RELAY
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U-MOSII)
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U−MOSII)
TOSHIBA Field Effect Transistor Silicon N/ P Channel MOS Type (U−MOSII)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SK3236 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)
From old datasheet system
Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Switching Regulator Applications, DC-DC Converter and Motor Drive Applications
|
Toshiba Semiconductor
Hitachi Semiconductor
|
| SSM3K17FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
| NDP6020P NDB6020P |
P-Channel Enhancement Mode Field Effect Transistor24A,-20V0.05ΩP沟道增强型MOS场效应管（漏电流-24A, 漏源电压-20V，导通电0.05Ω 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
P-Channel Logic Level Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
|
| 2SK3407 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)
|
Toshiba Semiconductor
|
| MTD3055VL MTD3055VLNL |
N-Channel Logic Level Enhancement Mode Field Effect Transistor 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
From old datasheet system
M-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
