| PART |
Description |
Maker |
| BFU910F-15 |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| BFU610F |
NPN Wideband Silicon Germanium RF Transistor
|
Philips Semiconductors
NXP
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| BFP620 |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| BFR740L3 |
NPN Silicon Germanium RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| NESG340033 NESG340033-T1B |
NPN Silicon Germanium RF Transistor
|
Renesas Electronics Corporation
|
| BGT24MTR12 |
Silicon Germanium 24 GHz Transceiver MMIC
|
Infineon Technologies
|
| BGA61408 |
Silicon Germanium Broadband MMIC Amplifier
|
Infineon Technologies AG
|
| SRF-1016 SRF-1016Z |
65 - 300 MHZ SILICON GERMANIUM IF RECEIVER
|
Sirenza Microdevices, Inc
|
| BGA616 |
Silicon Germanium Broadband MMIC Amplifier
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
