| PART |
Description |
Maker |
| ISL74422ARH ISL74422ARHF_PROTO ISL74422ARHY_SAMPLE |
9 A BUF OR INV BASED MOSFET DRIVER, CDFP16
Radiation Hardened 9A, Non-Inverting Power Radiation Hardened 9A, Non-Inverting Power
9A, Non-Inverting Power MOSFET Drivers; Temperature Range: -55°C to 125°C; Package: Die (Military Visual) BUF OR INV BASED MOSFET DRIVER, UUC
|
Intersil Corporation
Intersil, Corp.
|
| HIP1012ACBZA-T |
Dual Power Distribution Controller; Temperature Range: 0°C to 70°C; Package: 14-SOIC T&R 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO14
|
Intersil, Corp.
|
| IXFH74N20 IXFT74N20 IXFH68N20 IXFT68N20 |
Discrete MOSFETs: HiPerFET Power MOSFETS
High Performance, 145 MHz FastFET™ Op Amp; Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 68 A, 200 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| ISL6622AIBZ ISL6622AIRZ ISL6622ACRZ ISL6622ACBZ IS |
VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers; Temperature Range: 0°C to 70°C; Package: 10-DFN T&R 3 A AND GATE BASED MOSFET DRIVER, PDSO10
VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R 3 A AND GATE BASED MOSFET DRIVER, PDSO8
|
Intersil Corporation
Intersil, Corp.
|
| EDI8F32259C35MNC EDI8F32259C35MMC EDI8G32259B12MZC |
High Speed, Single Channel, Power MOSFET Driver; Temperature Range: -40°C to 85°C; Package: 8-PDIP
x32 SRAM Module
TFT-LCD DC/DC with Integrated Amplifiers; Temperature Range: -40°C to 85°C; Package: 32-QFN T&R X32号的SRAM模块
|
Integrated Device Technology, Inc.
Samsung Semiconductor Co., Ltd.
|
| NTD4805N-35G NTD4805N-1G NTD4805NT4G |
Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK 12.6 A, 30 V, 0.0074 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| NTHC5513T1 |
Power MOSFET 20 V, 3.9 A / −3.0 A, Complementary ChipFET-TM 3.1 A, 20 V, 0.08 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| NTF3055L108 NTF3055L108D NTF3055L108T1 NTF3055L108 |
Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223 3 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET 3.0 A, 60 V, Logic Level N-Channel SOT-223(3A,60V逻辑电平,N通道，SOT-223封装的功率MOSFET)
Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223
|
ONSEMI[ON Semiconductor]
|
| HUF75343S3 HUF75343S3S HUF75343G3 HUF75343P3 HUF75 |
75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs 75 A, 55 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel 75 A, 55 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| HIP4086AABZ HIP4086ABZ HIP4086ABZT |
80V, 500mA, 3-Phase MOSFET Driver 1.25A peak turn-off current
80V/0.5A Peak Three Phase Driver; Temperature Range: -25°C to 85°C; Package: 24-SOIC T&R 1.1 A HALF BRDG BASED MOSFET DRIVER, PDSO24
|
Intersil Corporation
|
|
