| PART |
Description |
Maker |
| KM44C1000D KM44V1000D KM44C1000DJL-7 KM44C1000DJL- |
1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns
1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 70ns
|
Samsung Electronic
|
| K4E660411D-TC60 K4E640411D-JC50 K4E640411D-JC60 K4 |
16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG[Samsung semiconductor]
|
| K4E640412E |
(K4E640412E / K4E660412E) 16M x 4bit CMOS Dynamic RAM
|
Samsung semiconductor
|
| KM44C16000B KM44C16100B |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung semiconductor
|
| IC41SV4105 |
1M x 4bit Dynamic RAM with Fast Page Mode
|
Integrated Circuit Solution
|
| K4E170411D K4E160411D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out 4米4位的CMOS动态随机存储器的扩展数据输
Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 220uF; Voltage: 35V; Case Size: 10x16 mm; Packaging: Bulk 4米4位的CMOS动态随机存储器的扩展数据输
|
Bourns, Inc.
Samsung Semiconductor Co., Ltd.
|
| K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4 |
8M X 8 EDO DRAM, 45 ns, PDSO32
8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输
(K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| VG26VS17400FJ VG26S17400FJ-6 VG26V17400FJ-6 VG26V1 |
4,194,304 x 4 - Bit CMOS Dynamic RAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
4/194/304 x 4 - Bit CMOS Dynamic RAM
|
Vanguard International ...
Vanguard International Semiconductor, Corp.
|
| MB814265-70 MB814265-60 |
CMOS 256K ×16 BIT
Hyper Page Mode Dynamic RAM(CMOS 256K ×16 位超级页面存取模式动态RAM)
CMOS 256K ×16 BIT Hyper Page Mode Dynamic RAM(CMOS 256K ×16 位超级页面存取模式动态RAM) 的CMOS 256K × 16位的超页模式动态RAM的CMOS56K × 16位超级页面存取模式动态内存）
CMOS 256K ?16 BIT Hyper Page Mode Dynamic RAM(CMOS 256K ?16 浣??绾ч〉?㈠???ā寮????AM)
|
Fujitsu Limited
Fujitsu, Ltd.
|
