PART |
Description |
Maker |
GS881Z18AT-133 GS881Z18AT-133I GS881Z18AT-150 GS88 |
133MHz 8.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM 150MHz 7.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM 166MHz 7ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM 200MHz 6.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM 225MHz 6ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM 250MHz 5.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
|
GSI Technology
|
DS1265W-100IND |
3.3V 8Mb Nonvolatile SRAM 1M X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA36
|
Maxim Integrated Products, Inc. Dallas Semiconductor
|
GS880F18AT-6I GS880F32AT-6I |
6ns 512K x 18 8Mb sync burst SRAM 6ns 256K x 32 8Mb sync burst SRAM
|
GSI Technology
|
IBM0418A80QLAB IBM0418A40QLAB |
8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )同步CMOS静态RAM) 4Mb( 256K x 18 ) SRAM(4Mb( 256K x 18 )同步CMOS静态RAM) 4Mb的(256 × 18)的SRAMMb的(256 × 18)同步的CMOS静态RAM)的
|
IBM Microeletronics International Business Machines, Corp.
|
DS1265W-100IND |
3.3V 8Mb Nonvolatile SRAM
|
MAXIM - Dallas Semiconductor
|
DS1265W DS1265W-DS1265W-150 DS1265W-100 DS1265W-15 |
3.3V 8Mb Nonvolatile SRAM From old datasheet system
|
MAXIM - Dallas Semiconductor Dallas Semiconducotr
|
A0A19 |
Super Low Power Slow SRAM - 8Mb
|
Hynix Semiconductor
|
MT58L256L36P MT58L256L32P MT58L256V32P MT58L256V36 |
8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM
|
Micron Technology
|
N08L63W2AB27I N08L63W2AB27IT N08L63W2AB7I N08L63W2 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 隆驴 16 bit 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit
|
ON Semiconductor
|
N08L163WC2A |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 】 16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|