| PART |
Description |
Maker |
| BUZ21 BUZ21SMD |
Low Voltage MOSFETs - Power MOSFET, 100V,DPAK , RDSon=0.085 Ohm, 21A, NL
Power MOSFET, 100V,D²PAK , RDSon=0.085 Ohm, 21A, NL
SIPMOS Power Transistor
|
Infineon Technologies AG
|
| IRFI460 IRFI460-15 |
Simple Drive Requirements
TRANSISTOR N-CHANNEL(Vdss=500V/ Rds(on)=0.27ohm/ Id=21A)
TRANSISTOR N-CHANNEL(Vdss=500V, Rds(on)=0.27ohm, Id=21A)
500V Single N-Channel Hi-Rel MOSFET in a TO-259AA package
|
International Rectifier
|
| HGTP5N120BN |
21A, 1200V, NPT Series N-Channel IGBTs
|
Fairchild Semiconductor
|
| FDD663710 |
P-Channel PowerTrench? MOSFET -35V, -21A, 18mΩ
|
Fairchild Semiconductor
|
| HGTP5N120BND HGTG5N120BND HGTP5N120 HGTG5N120BNDNL |
3.3V 72-mc CPLD
21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| IRG4PH40U |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AC
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管（VCES和\u003d 1200伏，的Vce（on）典\u003d 2.43V，@和VGE \u003d 15V的，集成电路\u003d 21A条）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| CR-21A |
CR-21A 3PST N.O., Double Break, 5 Amps,440 VAC, 60 Hz, 380 VAC, 50 Hz
|
Tyco Electronics
|
| BUZ30A BUZ30AC67078-S1303A3 |
Door actuator driver
SIPMOS Power Transistor
Low Voltage MOSFETs - Power MOSFET, 200V, TO-220, RDSon=0.13 Ohm, 21A, NL
|
INFINEON[Infineon Technologies AG]
|
| 4789.1100 |
IEC Power Connector; Voltage Rating:250V; Mounting Type:Cable; Current Rating:21A; Body Material:Thermoplastic RoHS Compliant: Yes
|
SCHURTER INC
|
| APT10050LLC APT10050B2LC |
POWER MOS VI 1000V 21A 0.500 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage
|
Advanced Power Technology Ltd.
|
| APT10050B2VR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 21A 0.500 Ohm
|
Advanced Power Technology
|
| TX10005JASLPLNH TX1000 TX10005BASLPLNH TX10005CASL |
1000 Watt. AC/DC power supply. Output voltage 2.5V, output current 200A
1000 Watt. AC/DC power supply. Output voltage 18.0V, output current 56A
1000 Watt. AC/DC power supply. Output voltage 24.0V, output current 42A
1000 Watt. AC/DC power supply. Output voltage 28.0V, output current 36A
1000 Watt. AC/DC power supply. Output voltage 3.3V, output current 182A
1000 Watt. AC/DC power supply. Output voltage 15.0V, output current 67A
1000 Watt. AC/DC power supply. Output voltage 48.0V, output current 21A
1000 Watt. AC/DC power supply. Output voltage 36.0V, output current 28A
1000 WATT AC/DC POWER SUPPLY
1000 Watt. AC/DC power supply. Output voltage 20.0V, output current 50A
|
CANDD[C&D Technologies]
|
