| PART |
Description |
Maker |
| TC59S6416BFT |
(TC59S6404/08/16BFTx) 64m CMOS Sdram
|
Toshiba Semiconductor
|
| TC58NS512DC |
512-MBIT (64M x 8 BITS) CMOS NAND E 2 PROM (64M BYTE SmartMedia TM)
|
TOSHIBA
|
| TC59S6404CFT |
(TC59S6404/08/16CFTx) SDRAM
|
Toshiba Semiconductor
|
| PD42S65405 PD4264405 |
16,777,216 Words by 4 Bits CMOS Dynamic RAMs(64M 动态RAM) 16,777,216词由4位的CMOS动态存储器（RAM400动态）
16,777,216 Words by 4 Bits CMOS Dynamic RAMs(64M ?ㄦ?RAM)
|
NEC, Corp.
NEC Corp.
|
| MX25L6406EM2I12G MX25L6406EMI12G MX25L6406EZNI12G |
64M-BIT [x 1 / x 2] CMOS SERIAL FLASH
|
Macronix International
|
| MX25L6405MI-20 MX25L6405MC-20G MX25L6405MI-20G |
64M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY
|
Macronix International
|
| MX29LV065XBI-90 MX29LV065 MX29LV065TC-12 MX29LV065 |
64M-BIT [8M x 8] CMOS EQUAL SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
| MX25U6435F MX25U6435FM2I10G MX25U6435FZNI10G |
1.8V 64M-BIT [x 1/x 2/x 4] CMOS MXSMIO? (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| MX25L6435E MX25L6435EM2I10G MX25L6435EMI10G MX25L6 |
64M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| MX28F640C3TXAC-90 MX28F640C3TTC-12 MX28F640C3TTI-1 |
64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 120 ns, PDSO48
64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 120 ns, PBGA48
|
Macronix International Co., Ltd.
|
