| PART |
Description |
Maker |
| MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S191 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
Freescale Semiconductor, Inc
MOTOROLA
|
| MRF5S21130SR3 MRF5S21130 MRF5S21130R3 MRF5S21130S |
MRF5S21130, MRF5S21130R3, MRF5S21130S, MRF5S21130SR3 2170 MHz, 28 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
| A2T23H160-24S A2T23H160-24SR3 |
N--Channel Enhancement--Mode Lateral MOSFET
|
NXP Semiconductors
|
| AFT09S282N AFT09S282NR3 |
N-Channel Enhancement-Mode Lateral MOSFET
|
NXP Semiconductors
|
| AFT09S220-02N AFT09S220-02NR3 |
N-Channel Enhancement-Mode Lateral MOSFET
|
NXP Semiconductors
|
| A2T23H300-24S A2T23H300-24SR6 |
N--Channel Enhancement--Mode Lateral MOSFET
|
NXP Semiconductors
|
| A2T21H450W19S A2T21H450W19SR6 |
N--Channel Enhancement--Mode Lateral MOSFET
|
NXP Semiconductors
|
| A2T21H360-23N A2T21H360-23NR6 |
N--Channel Enhancement--Mode Lateral MOSFET
|
NXP Semiconductors
|
| A2T21H140-24SR3 |
N--Channel Enhancement--Mode Lateral MOSFET
|
NXP Semiconductors
|
| MRF6S19140HSR3 MRF6S19140HR3 |
N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale (Motorola)
FREESCALE[Freescale Semiconductor, Inc]
|
| MRFE6S9135HR3 |
N-Channel Enhancement-Mode Lateral MOSFETs N沟道增强型MOSFET的外
|
飞思卡尔半导体(中国)有限公司
|
