| PART |
Description |
Maker |
| SKDH116-L75 SKDH116_12-L75 SKDH116_16-L75 SKDH116/ |
三相整流桥IGBT的制动斩波器
MOSFET; ID (A): 0.03; VDS (V): 6; Pch : 0.15; |yfs| (S) typ: 0.029; PG (dB) typ: 22; Ciss (pF) typ: 2.1; NF (dB) typ: 1.75; IDSS (mA): -; Package: MPAK-4
3-Phase Bridge Rectifier IGBT braking chopper
|
Semikron International
|
| 0R8GU41 |
RECTIFIER SILICON DIFFUSED TYPE HIGH SPEED RECTIFIER APPLICATIONS
TOSHIBA RECTIFIER SILICON DIFFUSED TYPE
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| EA401 EA404 EA406 EA432 EA430 EA444GR EA444GY EA33 |
Red, right angle, quad-level, mini LED. Lens diffused. Max.luminous intensity at 10mA 12.5mcd. Typ. forward voltage at 20mA 2.0V.
Yellow, right angle, quad-level, mini LED. Lens diffused. Max.luminous intensity at 10mA 5.0mcd. Typ. forward voltage at 20mA 2.1V.
Green, right angle, quad-level, mini LED. Lens diffused. Max.luminous intensity at 10mA 5.0mcd. Typ. forward voltage at 20mA 2.2V.
Ultra bright green, right angle, quad LED. Lens diffused. Max.luminous intensity at 20mA: 60.0mcd. Typ. forward voltage at 20mA 2.2V.
Ultra bright red, right angle, quad LED. Lens diffused. Max.luminous intensity at 20mA: 300.0mcd. Typ. forward voltage at 20mA 1.85V.
Red & green, right angle, quad-level, mini LED. Lens white diffused. Max.luminous intensity at 10mA: 32.0mcd(red), 32.0mcd(green). Typ. forward voltage at 20mA: 2.0V(red), 2.2V(green).
Green & yellow, right angle, quad-level, mini LED. Lens white diffused. Max.luminous intensity at 10mA: 32.0mcd(green), 20.0mcd(yellow). Typ. forward voltage at 20mA: 2.2V(green), 2.2V(yellow).
Red, right angle, tri-level, T-1, LED. Lens diffused. Max.luminous intensity at 20mA 50mcd. Typ. forward voltage at 20mA 2.0V.
Orange side viewing LED. Lens translucent. Typ.luminous intensity at 15mA 4.0mcd. Typ. forward voltage at 20mA 2.1V.
Green side viewing LED. Lens translucent. Typ.luminous intensity at 15mA 4.0mcd. Typ. forward voltage at 20mA 2.1V.
Ultra bright red, right angle, T-1 LED. Lens translucent. Max.luminous intensity at 20mA 500mcd. Typ. forward voltage at 20mA 1.85V.
|
Gilway Technical Lamp
|
| S6846 S10053 S6809 |
MOSFET, Switching; VDSS (V): 600; ID (A): 11; Pch : -; RDS (ON) typ. (ohm) @10V: 0.58; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1450; toff (µs) typ: -; Package: LDPAK (S)- (1)
Light modulation photo IC 光调制照片集成电
|
Hamamatsu Photonics
|
| 1S1885 1S1887 1S1888 |
Rectifier Silicon Diffused Type General Purpose Rectifier Applications
|
TOSHIBA
|
| S3921 S3921-512Q S3921-128Q |
NMOS linear image sensor Voltage output type with current-integration readout circuit and impedance conversion circuit
MOSFET, Switching; VDSS (V): 500; ID (A): 12; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.515; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: TO-220FN
|
Hamamatsu Photonics
|
| U05NH44 U05TH44 |
RECTIFIER SILICON DIFFUSED TYPE
|
Shenzhen Taychipst Electronic Co., Ltd
|
| 1R5JZ41 1R5NZ41 |
Rectifier Silicon Diffused Type
|
TOSHIBA
|
| S5688B S5688G S5688J S5688N |
TOSHIBA Rectifier Silicon Diffused Type
|
Toshiba Semiconductor
|
| R720366XXWA R5010210XXWA R9G00822XXWA R9G00622XXWA |
600 A, 3600 V, SILICON, RECTIFIER DIODE
100 A, 200 V, SILICON, RECTIFIER DIODE
2200 A, 800 V, SILICON, RECTIFIER DIODE
2200 A, 600 V, SILICON, RECTIFIER DIODE
2200 A, 400 V, SILICON, RECTIFIER DIODE
450 A, 150 V, SILICON, RECTIFIER DIODE
550 A, 50 V, SILICON, RECTIFIER DIODE
550 A, 150 V, SILICON, RECTIFIER DIODE
2500 A, 1300 V, SILICON, RECTIFIER DIODE
300 A, 900 V, SILICON, RECTIFIER DIODE
1800 A, 200 V, SILICON, RECTIFIER DIODE
1200 A, 3100 V, SILICON, RECTIFIER DIODE
2000 A, 2300 V, SILICON, RECTIFIER DIODE
3600 A, 2300 V, SILICON, RECTIFIER DIODE
100 A, 150 V, SILICON, RECTIFIER DIODE
|
POWEREX INC
|
| 05B4B48 |
Silicon Diffused Type Rectifier Stack 硅扩散型整流器堆
|
Cooper Power Tools / Utica
|
| 2SC3583 |
NF 1.2 dB TYP. f = 1.0 GHz Ga 13 dB TYP. f = 1.0 GHz
NPN Silicon Epitaxial Transistor
|
TY Semiconductor Co., L...
TY Semicondutor
|
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