| PART |
Description |
Maker |
| GM72V161621ET GM72V161621 GM72V161621ELT |
524,288 word x 16 Bit x 2 Bank - SYNCHRONOUS DYNAMIC RAM(SDRAM)
524288 word x 16 Bit x 2 Bank SDRAM
|
LG Semiconductor
List of Unclassifed Manufacturers
ETC
|
| GLT5160L16 GLT5160L16-7TC GLT5160L16-10FJ GLT5160L |
16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM
|
ETC[ETC]
N.A.
|
| HN29WB800R-10 HN29WB800R-12 HN29WB800R-8 HN29WB800 |
1048576-WORD X 8-BIT / 524288-WORD X 16-BIT CMOS FLASH MEMORY
|
Hitachi Semiconductor
|
| TMS626162A |
524288 BY 16-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY
|
http://
|
| MSM534031E |
Replaced by OPA2694 : Dual Wideband, Low Power, Current Feedback Operational Amplifier 8-SOIC
524,288-Word x 8-Bit MASKROM
From old datasheet system
524288-Word x 8-Bit MASKROM
|
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
OKI electronic components
|
| 5216165 |
1,048,576-word ′ 8-bit ′ 2-bank Synchronous Dynamic RAM
(SSTL-3)
2,097,152-word ′ 4-bit ′ 2-bank Synchronous Dynamic RAM
(SSTL-3)
From old datasheet system
|
hitachi
|
| GM72V66841CLT GM72V66841CT GM72V66841CT_CLT GM72V6 |
2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
2097152 word x 8 bit x 4 bank synchronous dynamic RAM
|
etc
LG Semicon Co.,Ltd.
LG Semiconductor
|
| HM5216808/5216408C HM5216808CTT-80 |
1048576-word*8-bit*2-bank synchronous dynamic RAM(SSTL-3)
2097152-word*8-bit*2-bank synchronous dynamic RAM(SSTL-3)
x8 SDRAM x8 SDRAM内存
|
Hitachi,Ltd.
|
| M5M5T5636UG-20 M5M5T5636UG-22 M5M5T5636UG-25 |
MITSUBISHI LSIs 18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Renesas Electronics Corporation
|
| M5M5Y816WG-85HI |
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
|
| M5M5V5636GP-20 M5M5V5636GP-22 M5M5V5636GP-25 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Renesas Electronics Corporation
|
