| PART |
Description |
Maker |
| 1N830 1N830A |
SILICON UHF DETECTOR DIODE
|
List of Unclassifed Manufacturers
|
| HSC278 |
Silicon Schottky Barrier Diode for Detector
|
Renesas Electronics Corporation
|
| A2S263 |
SILICON SCHOTTKY BARRIER DETECTOR DIODE
|
Advanced Semiconductor
|
| SW08CXC300 SW12CXC300 SW58CXC620 SW42CXC680 SW30CX |
650 A, 800 V, SILICON, RECTIFIER DIODE
650 A, 1200 V, SILICON, RECTIFIER DIODE
1520 A, 5800 V, SILICON, RECTIFIER DIODE
1610 A, 4200 V, SILICON, RECTIFIER DIODE
5100 A, 3000 V, SILICON, RECTIFIER DIODE
5100 A, 3200 V, SILICON, RECTIFIER DIODE
1030 A, 3600 V, SILICON, RECTIFIER DIODE
2050 A, 2800 V, SILICON, RECTIFIER DIODE
1860 A, 4000 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
| HSU88 |
Silicon Schottky Barrier Diode for Detector and Mixer
|
Renesas Electronics Corporation
|
| PH313 |
SILICON EPITAXIAL PLANAR PIN PHOTO DIODE DETECTOR
|
NEC Corp.
NEC[NEC]
|
| 1SS108 |
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
Silicon Schottky Barrier Diode for Various Detector High Speed Switching
|
HITACHI[Hitachi Semiconductor]
|
| 1SS198 |
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
|
Hitachi Semiconductor
|
| 1SS106 |
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
|
Renesas Electronics Corporation
|
| 1N2282 1N1185A 1N1612 1N3055 1N4510 1N3573R 1N1581 |
35 A, 300 V, SILICON, RECTIFIER DIODE, DO-5
40 A, 150 V, SILICON, RECTIFIER DIODE, DO-5
5 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
0.125 A, SILICON, SIGNAL DIODE
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
3.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-4
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
1 A, 400 V, SILICON, SIGNAL DIODE, DO-4
1 A, 200 V, SILICON, SIGNAL DIODE, DO-4
0.8 A, SILICON, SIGNAL DIODE
35 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
275 A, 150 V, SILICON, RECTIFIER DIODE, DO-9
|
|
|
