PART |
Description |
Maker |
K4S643232F-TP60 K4S643232F-TP70 K4S643232F- K4S643 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V -2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V CONNECTOR ACCESSORY 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3V
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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K4S643232E-TN70 K4S643232E-TE50 K4S643232E- K4S643 |
LED ORANGE DIFFUSED 2X5 RECT 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3 LED ORANGE DIFFUSED 2X5 RECT CONNECTOR ACCESSORY LED ORG/RED DIFFUSED 2X5MM RECT -2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. K4R271669B:Direct RDRAMData Sheet 256K x 16/18 bit x 32s banks Direct RDRAMTM 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
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Samsung Electronic SAMSUNG[Samsung semiconductor]
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KM4132G271BTQ-8 KM4132G271BTQ_R-8 KM4132G271B KM41 |
128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
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Samsung Electronic SAMSUNG[Samsung semiconductor]
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K4S643233E-SEN |
512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet
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Samsung Electronic
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K4S51323LF-F1H K4S51323LF-MC K4S51323L K4S51323LF- |
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 4米32Bit的4银行0FBGA移动SDRAM connector From old datasheet system
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SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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K4M513233E K4M513233E-F1H K4M513233E-F1L K4M513233 |
16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 4米32Bit的4银行0FBGA移动SDRAM
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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K4D263238M K4D263238M-QC45 K4D263238M-QC50 K4D2632 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
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Samsung Electronic SAMSUNG[Samsung semiconductor]
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K4D263238F K4D263238F-QC40 K4D263238F-QC50 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 100万x 32Bit的4银行双数据速率同步DRAM的双向数据选通和DLL 128Mbit DDR SDRAM From old datasheet system
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Samsung Semiconductor Co., Ltd. SAMSUNG[Samsung semiconductor] Samsung Electronics Inc
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SDC1740 SDC1740411B SDC1740412B SDC1740413B SDC174 |
INDUCTOR,2.2UH, 20%, 71.2M OHM MAX DRC, 1.75A IRMS SYNCHRO OR RESOLVER TO DIGITAL CONVERTER, MDIP32 12- and 14-Bit Hybrid Synchro/ Resolver-to-Digital Converters SYNCHRO OR RESOLVER TO DIGITAL CONVERTER, MDIP32 12- and 14-Bit Hybrid Synchro/ Resolver-to-Digital Converters 12 -14位混合同分解到数字转换器
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ANALOG DEVICES INC Analog Devices, Inc. AD[Analog Devices]
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M13S32321A-5L M13S32321A-6L M13S32321A08 |
256K x 32 Bit x 4 Banks Double Data Rate SDRAM
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Elite Semiconductor Memory Technology Inc.
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