Part Number Hot Search : 
2SA19 0P2S5ZE0 DBF60T TD62C805 NX7102 LTC3769 A1012 TIP41A
Product Description
Full Text Search

MTW6N60E - TMOS POWER FET

MTW6N60E_1562434.PDF Datasheet

 
Part No. MTW6N60E
Description TMOS POWER FET

File Size 99.72K  /  2 Page  

Maker

Motorola



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: MTW6N60E
Maker: 摩托罗拉
Pack: TO-3P
Stock: Reserved
Unit price for :
    50: $0.30
  100: $0.28
1000: $0.27

Email: oulindz@gmail.com

Contact us

Homepage
Download [ ]
[ MTW6N60E Datasheet PDF Downlaod from Datasheet.HK ]
[MTW6N60E Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for MTW6N60E ]

[ Price & Availability of MTW6N60E by FindChips.com ]

 Full text search : TMOS POWER FET


 Related Part Number
PART Description Maker
MTP10N60E7 ON2541 MTP10N60E7-D TMOS 7 E-FET™ High Energy Power FET
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
ON Semiconductor
MTB2N40E MTB2N40E-D TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 400 VOLTS
ON Semiconductor
MOTOROLA[Motorola, Inc]
MTP10N40 MTP10N40E ON2540 MTP10N40E-D TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
From old datasheet system
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
MTB2N60E_D ON2407 MTB2N60E MTB2N60E-D TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 600 VOLTS
From old datasheet system
ON Semiconductor
MOTOROLA[Motorola, Inc]
MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 4.0 AMPERES 800 VOLTS
From old datasheet system
ON Semiconductor
MOTOROLA[Motorola, Inc]
MTP3N120E_D ON2600 MTP3N120E-D TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1200 VOLTS
ON Semiconductor
MTD3N25E MTD3N25E-D TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3 AMPERES 250 VOLTS RDS(on) = 1.4 OHM
ON Semiconductor
MOTOROLA[Motorola, Inc]
MTD6N10E ON2512 MTD6N10E-D TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM
From old datasheet system
ON Semiconductor
MOTOROLA[Motorola, Inc]
MTB50N06V_D MTB50N06V ON2433 MTB50N06V-D TMOS V Power Field Effect Transistor D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 42 AMPERES 60 VOLTS
From old datasheet system
ON Semiconductor
MOTOROLA[Motorola, Inc]
MMFT2N25E-D TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
 
 Related keyword From Full Text Search System
MTW6N60E price MTW6N60E npn MTW6N60E Audio MTW6N60E ic中文资料网 MTW6N60E Bit
MTW6N60E data sheet ic MTW6N60E speed MTW6N60E watt MTW6N60E fairchild MTW6N60E Serial
 

 

Price & Availability of MTW6N60E

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.15317106246948