| PART |
Description |
Maker |
| D132A D132C |
Single In Line Conformal Coated Diode Network
|
BI Technologies
|
| CS201 CS20104D3C106K5E CS20108D3C106K5E CS20118D3C |
Capacitor Networks, Single-In-Line,Conformal Coated SIP,
|
Vishay Siliconix
|
| CSC10A012K20GPA |
Thick Film Resistor Networks, Single-In-Line, Conformal Coated SIP
|
Vishay Siliconix
|
| CS201 |
Capacitor Networks, Single-In-Line, Coated SIP, ""D"" Profile, X7R and COG capacitors available, Multiple isolated capacitors, Multiple capacitors, common ground, Custom design capability
|
Vishay
|
| TMM2018AP TMM2018AP-25 TMM2018AP-35 TMM2018AP-45 |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply 16,384位高速，低功耗静态随机存取记2048字由8位，V电源供电
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| IR |
Epoxy Conformal Coated, Uniform Roll Coated Inductor
|
Vishay
|
| CS206 |
Resistor/Capacitor Networks ECL Terminators and Line Terminator, Conformal Coated, SIP
|
VISAY[Vishay Siliconix]
|
| IDT72T51333 IDT72T51353 IDT72T51343 |
2.5V MULTI-QUEUE FLOW-CONTROL DEVICES (4 QUEUES) 36 BIT WIDE CONFIGURATION 589,824 bits, 1,179,648 bits and 2,359,296 bits
|
Integrated Device Technology, Inc.
|
| EDS2532AABJ-75-E EDS2532AABJ-75L-E |
256M bits SDRAM (8M words 32 bits) 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
256M bits SDRAM (8M words 32 bits) 256M位的SDRAM00万字32位）
256M bits SDRAM (8M words ?32 bits)
|
Elpida Memory, Inc.
ELPIDA MEMORY INC
|
| EDS6416AHBH-75-E EDS6416CHBH-75-E |
64M bits SDRAM (4M words x 16 bits) 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
64M bits SDRAM (4M words x 16 bits) 6400位的SDRAM4分字× 16位）
|
Elpida Memory, Inc.
|
| IS42VS16400C1-12T IS42VS16400C1-12TI IS42VS16400C1 |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
