PART |
Description |
Maker |
IPB091N06NG IPP091N06NG |
OptiMOSPower-Transistor 的OptiMOS㈢功率晶体管 OptiMOS㈢ Power-Transistor OptiMOS? Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
IPD230N06NG |
OptiMOS??Power-Transistor OptiMOS? Power-Transistor OptiMOSPower-Transistor 的OptiMOS㈢功率晶体管
|
Infineon Technologies AG
|
SPA11N60C2 SPB11N60C2 SPP11N60C2 |
Cool MOS?/a> Power Transistor for lowest Conduction Losses & fastest Switching Cool MOS Power Transistor Cool MOS??Power Transistor Cool MOS⑩ Power Transistor Cool MOSPower Transistor 酷马鞍山⑩功率晶体管
|
INFINEON[Infineon Technologies AG]
|
TPCP840207 TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
SPP12N50C3 SPI12N50C3 SPA12N50C3 SPB12N50C3 |
Cool MOSPower Transistor 酷马鞍山⑩功率晶体管 for lowest Conduction Losses & fastest Switching COOL MOS⒙ POWER TRANSISTOR Cool MOS⑩ Power Transistor Cool MOS Power Transistor Cool MOS?/a> Power Transistor
|
INFINEON[Infineon Technologies AG]
|
UPA1870GR-9JG UPA1870 UPA1870GR-9JG-E1 UPA1870GR-9 |
N-channel enhancement type MOS FET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING TRANSISTOR | MOSFET | HALF BRIDGE | 20V V(BR)DSS | 6A I(D) | SO
|
NEC[NEC]
|
UPA1807 UPA1807GR-9JG UPA1807GR-9JG-E1 UPA1807GR-9 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12A I(D) | SO N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING N Channel enhancement MOS FET
|
NEC Corp. NEC[NEC]
|
TPC8405 |
Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)
|
Toshiba Semiconductor
|
SPA20N60C2 SPB20N60C2 SPP20N60C2 |
for lowest Conduction Losses & fastest Switching Cool MOS⑩ Power Transistor Cool MOS Power Transistor Cool MOS?/a> Power Transistor
|
INFINEON[Infineon Technologies AG]
|
NP109N04PUG-E2-AY NP109N04PUG-E1-AY NP109N04PUG |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
|
NEC
|
TPCP8404 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MO/U-MOS)
|
Toshiba Semiconductor
|