| PART |
Description |
Maker |
| HA5352IP HA5352 HA5352IB |
Fast Acquisition Dual Sample and Hold Amplifier
|
INTERSIL[Intersil Corporation]
|
| AD7891 AD7891YP-2 AD7891SS-2 |
0.3-7V; 450mW; LC2MOS 8-channel, 12-bit high speed, data acquisition system. For data acquisition systems, motor control, mobile communication base stations, instrumenatation
True Bipolar Input, Single Supply, Parallel, 8-Channel, 12-Bit High Speed Data Acquisition System
|
Analog Devices
|
| EDI2DL32256V EDI2DL32256V35BC EDI2DL32256V40BC EDI |
TMS320C6202. TMS320C6203. TMS320C6204. TMS320C6 Families
x32 Fast Synchronous SRAM
256Kx32 Synchronous Pipline Burst SRAM 3.3V(3.3V,4.0ns,256Kx32同步流水线脉冲静态RAM)
256Kx32 Synchronous Pipline Burst SRAM 3.3V(3.3V,3.5ns,256Kx32同步流水线脉冲静态RAM)
256Kx32 Synchronous Pipline Burst SRAM 3.3V(3.3V,3.8ns,256Kx32同步流水线脉冲静态RAM)
|
WEDC[White Electronic Designs Corporation]
|
| MAX161 MAX161ACPI MAX161ACWI MAX161AEPI MAX161AEWI |
CMOS, 20µs, 8-Bit, 8-Channel Data Acquisition System
CMOS 8-Bit 8-Channel Data Acquisition System
CMOS 8Bits 8 Channel DAS(CMOS 8 通道数据采集系统)
16-Bit Ultra-Low-Power MCU, 116KB Flash, 8KB RAM, 12-Bit ADC, Dual DAC, DMA, 3 OPAMP, 160 Seg LCD 100-LQFP -40 to 85 8-CH 8-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, CDIP28
CMOS 8-Bit 8Channel Data Acquisition System 8-CH 8-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, PDIP28
CMOS 8-Bit 8Channel Data Acquisition System 8-CH 8-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, CDIP28
CMOS 8-Bit 8Channel Data Acquisition System 8-CH 8-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, PDSO28
CMOS 8-Bit 8Channel Data Acquisition System CMOS0µs位通道数据采集系统
|
MAXIM - Dallas Semiconductor
http://
Maixm
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| GS81032AT-150I GS81032AT-138I GS81032AT-133I GS810 |
18ns 66MHz 32K x 32 1Mb synchronous burst SRAM
12ns 100MHz 32K x 32 1Mb synchronous burst SRAM
10ns 133MHz 32K x 32 1Mb synchronous burst SRAM
9.7ns 138MHz 32K x 32 1Mb synchronous burst SRAM
11ns 117MHz 32K x 32 1Mb synchronous burst SRAM
9ns 150MHz 32K x 32 1Mb synchronous burst SRAM
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 9.7 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 18 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 10 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM
|
GSI Technology, Inc.
|
| IRF520NLPBF IRF520NSPBF-15 IRF520NSTRLPBF |
FAST SWITCHING
Advanced Process Technology
|
International Rectifier
|
| AD364RJ AD364 AD363 AD364RTD AD363RK AD363RKD AD36 |
Complete 16-Channel,12-Bit Data Acquisition System 16-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL/PARALLEL ACCESS, CDIP64
Complete 16-Channel,12-Bit Data Acquisition System 16-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL/PARALLEL ACCESS, CDIP60
Circular Connector; No. of Contacts:19; Series:LJTPQ00R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle
COMPLETE 16 CHANNEL 12-BIT DATA ACQUISITION SYSTEMS
Complete 16-Channel, 12-Bit Data Acquisition Systems
|
Analog Devices, Inc.
http://
AD[Analog Devices]
|
| GS820E32A GS820E32AQ-4 GS820E32AQ-6I GS820E32AT-6I |
66MHz 18ns 64K x 32 2M synchronous burst SRAM
117MHz 11ns 64K x 32 2M synchronous burst SRAM
64K x 32 / 2M Synchronous Burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology
|
| GS820H32Q-5I GS820H32T-150I GS820H32GT-5I GS820H32 |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
| WM8144 WM8144-10 WM8144-10CFT_V |
10 OR 12-BIT, 4MSPS IMAGING DATA ACQUISITION SYSTEM WITH INTEGRATED DIGITAL POST-PROCESSING
Integrated 10-bit Data Acquisition system for Imaging Applications
|
WOLFSON[Wolfson Microelectronics plc]
|
| APT50GF60B2RD APT50GF60LRD |
Fast IGBT & FRED 600V 80A
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBT is a new generation of high voltage power IGBTs.
Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代
|
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
|
| BYT30PI-400 BYT30PI-400RG |
30 A, 400 V, SILICON, RECTIFIER DIODE PLASTIC, DOP3I, 2 PIN
Multiconductor Cable; Number of Conductors:3; Conductor Size AWG:16; No. Strands x Strand Size:19 x 29; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Temperature Max:105 C; Voltage Nom.:600V RoHS Compliant: Yes
FAST RECOVERY RECTIFIER DIODES
FAST RECOVERY RECTIFIER DIODES
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
