PART |
Description |
Maker |
SY10EL34 SY10EL34LZC SY10EL34LZCTR SY10EL34ZC SY10 |
5V/3.3V ÷2,÷4,÷8 Clock Generation Chip(5V/3.3V ÷2,÷4,÷8时钟发生芯片) 5V/3.3V ÷ 2,4,8时钟发生器芯片(5V/3.3V ÷ 2,4,8时钟发生芯片 LED 2MM QUAD YELLOW 10EL SERIES, LOW SKEW CLOCK DRIVER, 3 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO16 5V/3.3V /2 /4 /8 CLOCK GENERATION CHIP 5V/3.3V ±2, ±4, ±8 CLOCK GENERATION CHIP 5V/3.3V 2, 4, 8 CLOCK GENERATION CHIP 5V/3.3V ÷2, ÷4, ÷8 CLOCK GENERATION CHIP
|
Micrel Semiconductor, Inc. MICREL[Micrel Semiconductor]
|
APT10026L2LL_03 APT10026L2LL APT10026L2LL03 APT100 |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET TO-264MAX, 3 PIN
|
Microsemi Corporation ADPOW[Advanced Power Technology] Microsemi, Corp.
|
STP25NM60N07 STB25NM60N STB25NM60N-1 STF25NM60N ST |
N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh Power MOSFET N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh?/a> Power MOSFET N-channel 600V - 0.140楼? - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh垄芒 Power MOSFET N-channel 600V - 0.140ヘ - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh⑩ Power MOSFET
|
http:// STMicroelectronics
|
SY100S838ZCTR SY100S838ZC SY100S838LZITR SY100S838 |
(÷1, ÷2/3) OR (÷2, ÷4/6) CLOCK GENERATION CHIP (1 2/3) OR (2 4/6) CLOCK GENERATION CHIP SMD-RELAY,2FORMC,5V,1A,140MW,S-S STB,10P SOLDER WALL MT RECPT CAP 0.018UF 500V 10% X7R SMD-1210 TR-7 PLATED-NI/SN (±1, ±2/3) OR (±2, ±4/6) CLOCK GENERATION CHIP 100S SERIES, LOW SKEW CLOCK DRIVER, 4 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO20
|
MICREL[Micrel Semiconductor] Micrel Semiconductor,Inc. Micrel Semiconductor, Inc.
|
STD11NM60N |
N-channel Second generation MDmesh Power MOSFET
|
ST Microelectronics
|
APT10045B2FLL APT10045LFLL |
MGrid IDT Rec W/SglLRmp .76AuLF 10Ckt Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS 7 1000V 23A 0.450 Ohm
|
Advanced Power Technology Ltd.
|
M5LV-320_192-10AI M5LV-512_104-6AC M5-192_74-15YC |
IND SHLD 3.3UH 9A RMS SMT Fifth Generation MACH Architecture EE PLD, 7.5 ns, PQFP160 Fifth Generation MACH Architecture EE PLD, 12 ns, PBGA256 Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP208 Fifth Generation MACH Architecture EE PLD, 20 ns, PQFP240 Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP144 Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP208 10-Bit Broadband Modem Mixed Signal Front End (MxFE®); Package: LFCSP (9x9mm, 7.10 exposed pad); No of Pins: 64; Temperature Range: Industrial EE PLD, 12 ns, PQFP144 12-Bit Broadband Modem Mixed Signal Front End (MxFE®); Package: LFCSP (9x9mm, 7.10 exposed pad); No of Pins: 64; Temperature Range: Commercial EE PLD, 15 ns, PQFP144 12-Bit Broadband Modem Mixed Signal Front End (MxFE®); Package: LFCSP (9x9mm, 7.10 exposed pad); No of Pins: 64; Temperature Range: Industrial EE PLD, 15 ns, PQFP144 Fifth Generation MACH Architecture EE PLD, 6.5 ns, PQFP240 CONNECTOR ACCESSORY EE PLD, 10 ns, PQFP100 Fifth Generation MACH Architecture EE PLD, 7.5 ns, PBGA352 Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP100 Fifth Generation MACH Architecture EE PLD, 20 ns, PBGA352 Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP160 Fifth Generation MACH Architecture EE PLD, 10 ns, PBGA352 Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP160 Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP160 Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP240 Fifth Generation MACH Architecture EE PLD, 10 ns, PBGA256 Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP240 Fifth Generation MACH Architecture EE PLD, 6.5 ns, PQFP208 Fifth Generation MACH Architecture EE PLD, 20 ns, PQFP208 Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP208 CONNECTOR ACCESSORY EE PLD, 12 ns, PQFP100 Fifth Generation MACH Architecture EE PLD, 5.5 ns, PQFP100 Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP240 Fifth Generation MACH Architecture
|
Lattice Semiconductor, Corp. Lattice Semiconductor Corporation
|
IRLML2803GPBF11 |
Generation V Technology, Ultra Low On-Resistance, N-Channel MOSFET
|
International Rectifier
|
APT5010LVRG |
Power MOS V is a new generation of high voltage N-Channel enhancement
|
Microsemi Corporation
|
KRF7401 |
Generation V Technology Ultra Low On-Resistance N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
APT8030JVFR_05 APT8030JVFR APT8030JVFR05 |
25 A, 800 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
MICROSEMI POWER PRODUCTS GROUP ADPOW[Advanced Power Technology]
|
APT5010B2LL |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
|
Microsemi Corporation
|
|