PART |
Description |
Maker |
AD8366ACPZ-R7 |
DC to 600 MHz, Dual-Digital Variable Gain Amplifiers
|
Analog Devices
|
ADRF6518 |
1100 MHz Variable Gain Amplifiers and Baseband Programmable Filters
|
Analog Devices
|
AD600JRZ-R7 AD600JRZ-RL AD602ARZ-R7 AD600ARZ-R7 AD |
Dual, Low Noise, Wideband Variable Gain Amplifiers SPECIALTY ANALOG CIRCUIT, PDSO16
|
Analog Devices, Inc.
|
AD60006 AD602SQ_883B AD600 AD600AQ AD600AR AD600AR |
Dual, Low Noise, Wideband Variable Gain Amplifiers
|
AD[Analog Devices]
|
AD600AR-REEL AD600SQ/883B AD600AR-REEL7 |
Dual, Low Noise, Wideband Variable Gain Amplifier, 0 dB To 40 dB Gain; Package: SOIC - Wide; No of Pins: 16; Temperature Range: Industrial SPECIALTY ANALOG CIRCUIT, PDSO16 Dual, Low Noise, Wideband Variable Gain Amplifier, 0 dB To 40 dB Gain; Package: CerDIP; No of Pins: 16; Temperature Range: Military SPECIALTY ANALOG CIRCUIT, CDIP16
|
Analog Devices, Inc.
|
EL4452 EL4452CN EL4452CS |
Wideband Variable-Gain Amplifier with Gain of 10
|
Intersil Corporation
|
EL5108IS-T13 EL5308 EL5108IW-T7 EL5108IW-T7A EL510 |
450MHz Fixed Gain Amplifiers with Enable 1 CHANNEL, VIDEO AMPLIFIER, PDSO6 450MHz Fixed Gain Amplifiers with Enable 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 450MHz Fixed Gain Amplifiers with Enable 1 CHANNEL, VIDEO AMPLIFIER, PDSO16 450MHz Fixed Gain Amplifiers with Enable 450MHz的固定增益放大器,启
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
BFQ193 Q62702-F1312 |
From old datasheet system NPN SILICON RF TRANSISTOR (FOR LOW NOISE, HIGH-GAIN AMPLIFIERS UP TO 2GHZ FOR LINEAR BROADBAND AMPLIFIERS)
|
SIEMENS[Siemens Semiconductor Group]
|
BFP193 Q62702-F1282 BFP193Q62702-F1282 |
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers) Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
AGB3301 AGB3301S24Q1 |
50 ohm HGIH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER Gain Block Amplifiers The AGB is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low ...
|
ANADIGICS, Inc. ANADIGICS[ANADIGICS, Inc] Anadigics Inc
|
BFR193W Q62702-F1510 |
From old datasheet system NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
|
http:// SIEMENS[Siemens Semiconductor Group]
|
CGY121B Q62702-G0071 CGY121 |
GaAs MMIC (Variable gain amplifier MMIC-Amplifier for mobile communication Gain Control range over 50dB)
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
|