| PART |
Description |
Maker |
| TPCP8701 |
TOSHIBA Transistor Silicon NPN Epitaxial Type
|
Toshiba Semiconductor
|
| MT6L04AT |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPEl
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| MT6L04AE |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| MP4502 |
TOSHIBA POWER TRANSISTOR MODULE SILICON NPN EPITAXIAL TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC255107 2SC2551 |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
|
Toshiba Semiconductor
|
| 2SC752 |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE(PCT PROCESS)
|
Toshiba Semiconductor
|
| 2SC6041 |
TOSHIBA Transistor Silicon NPN Triple-Diffused Mesa Type
|
Toshiba Semiconductor
|
| 2SC6026MFV |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
|
Toshiba Semiconductor
|
| TPCP8J0107 |
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type
|
Toshiba Semiconductor
|
| MG30G6EL2 |
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE 东芝滋养模块硅npn型三重扩散型
|
Renesas Electronics, Corp.
ETC
Toshiba Semiconductor
|
| 2SC2552 |
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
|
Toshiba Semiconductor
|
| HN3B02FU |
TOSHIBA Transistor Silicon PNP⋅NPN Epitaxial Type (PCT Process)
|
Toshiba Semiconductor
|
