| PART |
Description |
Maker |
| ADG784 ADG784BCP |
ADMC200 & ADMC201 Motion Coprocessors
CMOS 3 V/5 V Wide Bandwidth Quad 2:1 Mux in Chip Scale Package
CMOS 3 V/5 V/ Wide Bandwidth Quad 2:1 Mux in Chip Scale Package
CMOS 3 V/5 V, Wide Bandwidth Quad 2:1 Mux in Chip Scale Package
|
AD[Analog Devices]
|
| MC33181 MC33181D MC33181P MC34181 MC34184DTB MC331 |
Low Power, High Slew Rate, Wide Bandwidth, JFET Input Operational Amplifiers QUAD OP-AMP, 11500 uV OFFSET-MAX, 4 MHz BAND WIDTH, PDSO14
Low Power, High Slew Rate, Wide Bandwidth, JFET Input Operational Amplifiers QUAD OP-AMP, 11000 uV OFFSET-MAX, 4 MHz BAND WIDTH, PDSO14
(MC34182 / MC34184) Low Power / High Slew Rate / Wide Bandwidth / JFET Input Operational Amplifiers
Dual Precision Timer 14-PDIP -40 to 85
(MC33181 - MC33184) Low Power / High Slew Rate / Wide Bandwidth / JFET Input Operational Amplifiers
|
http://
Motorola Mobility Holdings, Inc.
ON Semiconductor
Motorola, Inc.
|
| K4H510738E-TC/LAA K4H510738E-TC/LB0 K4H510738E-TC/ |
Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-MSOP-PowerPAD -40 to 125 堆叠12Mb电子芯片DDR SDRAM内存规格（x4/x8
Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC -40 to 125
Stacked 512Mb E-die DDR SDRAM Specification (x4/x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| SJL-115 |
180o HYBRID WIDE BANDWIDTH 200 - 1200 MHz
180ì HYBRID WIDE BANDWIDTH 200 - 1200 MHz
|
SYNERGY MICROWAVE CORPORATION
|
| 2SC2411 |
NPN Transistor Plastic-Encapsulate Transi stors
|
SeCoS Halbleitertechnologie GmbH
|
| 2N5401 |
PNP Transistor Plastic-Encapsulate Transi stors
|
SeCoS Halbleitertechnologie GmbH
|
| N1014A N1019A N1012A |
Wide-Bandwidth Oscilloscope Mainframe and Modules
|
Keysight Technologies
|
| PJ4558 |
Dual Wide Bandwidth Operational Amplifiers
|
Promax-Johnton
|
