PART |
Description |
Maker |
AK5321024BW |
1,048,576 Word by 32 Bit CMOS Dynamic Random Access Memory 1,048,576 Word2位CMOS动态随机存取存储器
|
Accutek Microcircuit, Corp.
|
AM29F800T-90SEB AM29F800B-90SEB AM29F800T-70EE AM2 |
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
|
Advanced Micro Devices http://
|
VG26S18165CJ-5 VG26S18165CJ-6 VG26V18165CJ-5 VG26V |
1,048,576 x 16 - Bit CMOS EDO DRAM 1,048,576 x 16 - Bit CMOS Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
MSM538001E MSM538001E-XXGS-K MSM538001E-XXRS |
1,048,576字8位MASKROM From old datasheet system 1,048,576-Word x 8-Bit MASKROM
|
OKI SEMICONDUCTOR CO., LTD.
|
MSM514400D MSM514400D-50 MSM514400D-50SJ MSM514400 |
1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 1,048,576字4位动态随机存储器:快速页面模式型
|
OKI electronic componet... OKI SEMICONDUCTOR CO., LTD. OKI[OKI electronic componets] OKI electronic components
|
HM514400B HM514400BL HM514400C HM514400CL HM514400 |
1,048,576-word x 4-bit dynamic random access memory, 80ns 1,048,576-word x 4-bit dynamic random access memory, 60ns 1/048/576-word X 4-bit Dynamic Random Access Memory 1,048,576-word x 4-bit dynamic random access memory, 70ns
|
Hitachi Semiconductor
|
MR27V1602D |
1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit One Time PROM(1M字6位或2M字位一次性可编程ROM 1,048,576字16位或2097152字8位一次性可编程00万字× 16位或200万字× 8位一次性可编程ROM的字
|
OKI SEMICONDUCTOR CO., LTD.
|
TC514400AAZL-60 TC514400AJL-60 TC514400APL TC51440 |
60 ns, 4-bit generation dynamic RAM 1,048,576 x 4 BIT DYNAMIC RAM 1,048,576 × 4位动态随机存储器
|
TOSHIBA[Toshiba Semiconductor] Toshiba Corporation Toshiba, Corp.
|
TC514402AJ-10 TC514402AP-10 TC514402AP-70 TC514402 |
1,048,576 WORD x 4 BIT DYNAMIC RAM
|
Toshiba Corporation
|
MR27V801D |
1,048,576-Word x 8-Bit One Time PROM
|
OKI electronic componets OKI electronic components
|
MSM531652F |
1,048,576-Words x 16-bit or 2,097,152-Bytes x 8-bit MaskROM From old datasheet system
|
OKI
|